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Flexible resistive random access memory based on lead-free all-inorganic perovskite thin film and prepared through chemical vapor deposition

A chemical vapor deposition, resistive memory technology, applied in the preparation of bromide, chemical instruments and methods, lead halide, etc., can solve the problems of many film defects, limited application prospects, etc., to achieve high stability, excellent electrical performance, high The effect of bending resistance

Pending Publication Date: 2020-09-15
SHAANXI UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Among these methods, the films prepared by spin coating usually have more defects, which limits its application prospects in devices.

Method used

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  • Flexible resistive random access memory based on lead-free all-inorganic perovskite thin film and prepared through chemical vapor deposition
  • Flexible resistive random access memory based on lead-free all-inorganic perovskite thin film and prepared through chemical vapor deposition
  • Flexible resistive random access memory based on lead-free all-inorganic perovskite thin film and prepared through chemical vapor deposition

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] 1) Select a PET flexible substrate, and deposit a metal film with a thickness of 100nm on it as the lower metal electrode;

[0031] 2) Select a tube furnace with dual temperature zones to synthesize lead-free all-inorganic perovskite films, put lead bromide and cesium bromide powders in two quartz crucibles in the same molar ratio, and then put the quartz crucibles together The adjacent one is placed in the high temperature zone of the tube furnace, and the flexible substrate is placed in the low temperature zone. During the whole growth process, the flow rate of high-purity argon gas is 200 sccm; the high temperature zone is raised from room temperature to 750°C within 90 minutes, and kept for 2 minutes; at the same time, the low temperature zone is heated from room temperature to 250°C in 35 minutes, and Continue to heat up to 300°C in 60 minutes; after natural cooling, a lead-free all-inorganic perovskite film is obtained as the storage layer of the device;

[0032]...

Embodiment 2

[0040] 1) Select a PET flexible substrate, and deposit a metal film with a thickness of 100nm on it as the lower metal electrode;

[0041] 2) Select a tube furnace with dual temperature zones to synthesize lead-free all-inorganic perovskite films, put lead bromide and cesium bromide powders in two quartz crucibles in the same molar ratio, and then put the quartz crucibles together The adjacent one is placed in the high temperature zone of the tube furnace, and the flexible substrate is placed in the low temperature zone. During the whole growth process, the flow rate of high-purity argon gas is 200 sccm; the high temperature zone is raised from room temperature to 600°C within 90 minutes, and kept for 2 minutes; at the same time, the low temperature zone is heated from room temperature to 300°C in 35 minutes, and Continue to heat up to 350°C in 30 minutes; after natural cooling, a lead-free all-inorganic perovskite film is obtained as the storage layer of the device;

[0042]...

Embodiment 3

[0044] 1) Select a PI flexible substrate, and deposit a metal film with a thickness of 100nm on it as the lower metal electrode;

[0045]2) Select a tube furnace with dual temperature zones to synthesize lead-free all-inorganic perovskite films, put lead bromide and cesium bromide powders in two quartz crucibles in the same molar ratio, and then put the quartz crucibles together The adjacent one is placed in the high temperature zone of the tube furnace, and the flexible substrate is placed in the low temperature zone. During the whole growth process, the flow rate of high-purity argon gas is 200 sccm; the high temperature zone is raised from room temperature to 750°C within 90 minutes, and kept for 2 minutes; at the same time, the low temperature zone is heated from room temperature to 250°C in 35 minutes, and Continue to heat up to 300°C in 60 minutes; after natural cooling, a lead-free all-inorganic perovskite film is obtained as the storage layer of the device;

[0046] 3...

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Abstract

The invention provides a chemical vapor deposition method for preparing an environment-friendly flexible resistive random access memory based on a lead-free all-inorganic perovskite thin film, and belongs to the field of nonvolatile memories. The structure of the device sequentially comprises a flexible substrate, a lower metal electrode, a lead-free perovskite resistive random access memory layerand an upper metal electrode from bottom to top. The method comprises the following steps: 1, selecting an appropriate flexible substrate, and depositing a metal conductive film on the flexible substrate to serve as a lower metal electrode; 2, adopting a chemical vapor deposition lead-free all-inorganic perovskite thin film as a resistive random access memory layer; and 3, depositing an upper metal conductive film on the surface of the resistive random access memory layer to serve as an upper metal electrode. According to the preparation method of the environment-friendly flexible resistive random access memory provided by the invention, the lead-free all-inorganic perovskite thin film is synthesized through chemical vapor deposition, and the prepared device has high bending resistance and excellent electrical properties.

Description

technical field [0001] This field belongs to the field of non-volatile memory, and specifically relates to the preparation of flexible resistive memory devices based on lead-free all-inorganic perovskite thin films by chemical vapor deposition. Background technique [0002] Organic-inorganic halide hybrid perovskites have attracted great attention in recent years due to their excellent electrical properties such as tunable bandgap and long charge diffusion length. Such materials currently have broad application prospects in fields including solar cells, photodetectors, light-emitting diodes, and resistive memory. However, there are still some obstacles that limit their industrial applications. The limitations of this type of material mainly focus on two aspects: one is the instability of organic materials, and the other is the damage of the toxicity of lead to the human body and the pollution to the environment. Therefore, the development of lead-free halide perovskite mat...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L45/00C01B9/04C01D17/00C01G21/00C01G21/16C23C16/30
CPCC23C16/30C01B9/04C01G21/16C01G21/006C01D17/003H10N70/801H10N70/881H10N70/023
Inventor 朱媛媛曾雄王红军熊锐刘雍程鹏伟
Owner SHAANXI UNIV OF SCI & TECH
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