Silicon controlled rectifier type electrostatic discharge device and integrated circuit

Abstract

The invention discloses a silicon controlled rectifier type electrostatic discharge device and an integrated circuit. The silicon controlled rectifier type electrostatic discharge device is based on atraditional LDMOS-SCR device, wherein the N well region of a drain end is split into a first N well region and a second N well region which are matched with the second P doped region and the second Ndoped region in the N well region, so that the parasitic resistance of the N well region is improved, the voltage drop of the N well region under ESD discharge current is increased rapidly, the starting speed of a parasitic PNP tube is high, the starting speed of the silicon controlled rectifier type electrostatic discharge device is improved, and the electrostatic discharge protection level is improved. The integrated circuit comprises the silicon controlled rectifier type electrostatic discharge device. The silicon controlled rectifier type electrostatic discharge device is simple in structure improvement, the starting speed of the silicon controlled rectifier type electrostatic discharge device is improved under the condition that the process cost is not increased, and the electrostatic discharge protection level is improved.

Description

technical field [0001] The invention relates to the technical field of electrostatic discharge protection of integrated circuits, in particular to a thyristor type electrostatic discharge device and an integrated circuit. Background technique [0002] Electro-Static Discharge (ESD) is a common phenomenon in daily life. Although it is not easy to be sensed by the human body, it will pose a serious threat to integrated circuit products. [0003] The modes of electrostatic discharge phenomena are usually divided into several types: human body model (HBM), machine model (MM), and component charge-discharge model (CDM). Compared with HBM and MM discharge, CDM is an ESD mode in which a certain pin of the chip with its own static charge touches the ground, which causes the static charge inside the chip to transfer to the ground. Because the charge is stored in the relatively small parasitic capacitance of the chip, and the total resistance of the discharge circuit in CDM mode is v...

AI Technical Summary

Problems solved by technology

When the parasitic resistances R1 and R2 of the N-well area and P-well area are small, a larger ESD current is required to trigger the opening of the SCR path, causing the SCR to open slowly, so that the electrostatic discharge is not timely and damages the system

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