Power bipolar transistor and manufacture method thereof

Abstract

The invention discloses a power bipolar transistor and a manufacture method thereof and belongs to the field of semiconductor devices and technological manufacture. The power bipolar transistor sequentially comprises a collector area metal electrode, a collector area formed by first conduction type semiconductor materials and a base area formed by second conduction type semiconductor materials from bottom to top, wherein a base area metal electrode contacted with the surface of the base area and a transmission area formed by the first conduction type semiconductor materials are arranged above the base area; a transmission area metal electrode contacted with the surface of the transmission area is arranged above the transmission area, and isolation media are filled between the lateral wall of the transmission area and the base area metal electrode and between the base area metal electrode and the transmission area metal electrode. The lateral wall of the transmission area is wrapped by a medium layer, so that current of a base electrode directly flows to the lateral wall of the transmission area by contacting with the base area, and current side concentration effect is remitted. Simultaneously, the base area metal electrode is manufactured on the isolation media by punching holes, parasitic resistance of the base area cannot be added, and no influence can be caused on output power of the power bipolar transistor.

Description

technical field [0001] The invention belongs to the field of semiconductor devices and process manufacturing, and in particular relates to a power bipolar transistor structure and a preparation method thereof. Background technique [0002] Power bipolar transistors have been used commercially since the 1950s. Although the emergence of power MOSFETs in the 1970s replaced power bipolar transistors in some applications, they are still widely used as switching devices in various small and medium-sized power electronic circuits due to their mature technology and strong current handling capabilities. The physical characteristics of power bipolar transistors are essentially similar to ordinary triodes, but in order to achieve high collector voltages of power bipolar transistors, a high-resistance collector region is introduced. [0003] Secondary breakdown is one of the main causes of failure of power bipolar transistors in applications. Secondary breakdown is usually irrecoverabl...

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Problems solved by technology

[0003] Secondary breakdown is one of the main reasons for the failure of power bipolar transistors in applications. Secondary breakdown is usually irrecoverable, so it is very harmful

However, since the ring structure 8 has the same doping type as the emitter region, this will increase the parasitic resistance of the base region and bring additional power consumption to the power bipolar transistor

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