Preparation method and application of organic-inorganic heterojunction

A heterojunction and heterostructure technology, which is applied in semiconductor/solid-state device manufacturing, molybdenum sulfide, electrical components, etc., can solve problems such as the inability to realize the preparation of organic-inorganic heterostructures, and achieve the elimination of contact barriers, easy operation, The effect of good contact

Active Publication Date: 2020-07-17
NANJING UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] Purpose of the invention: Aiming at the problem that the existing methods cannot realize the preparation of organic-inorganic heterostructures, the present invention provides a method for preparing organic-inorganic heterojunctions, and provides an organic-inorganic heterostructure prepared by this method as an electronic Applications of device channel materials

Method used

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  • Preparation method and application of organic-inorganic heterojunction
  • Preparation method and application of organic-inorganic heterojunction
  • Preparation method and application of organic-inorganic heterojunction

Examples

Experimental program
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Embodiment 1

[0030] In dimethyl sulfoxide (DMSO), add 3,4,9,10-perylenetetraacid dianhydride (PTCDA), stir and dissolve completely and then precipitate, take the upper saturated solution and centrifuge at 3000r, 3min to obtain a concentration of 1g / L PTCDA / DMSO solution.

[0031] Such as figure 1 , Take the molybdenum sulfide block and clamp it with the electrode holder, immerse it in the above solution, insert a platinum electrode and a calomel reference electrode in the solution, and apply a sweep from 0V to 3V between the platinum electrode and the molybdenum sulfide electrode Voltage, scanning speed 100mV / s, PTCDA is embedded in the molybdenum sulfide layer after scanning one circle. After the reaction, the surface of the original molybdenum sulfide block was cleaned with isopropanol to obtain PTCDA / MoS 2 Organic-inorganic heterojunction.

[0032] The performance characterization of organic-inorganic heterojunctions is as follows: Figure 2~4 . in, figure 2 for PTCDA / MoS 2 The ...

Embodiment 2

[0035] Adopt the method of the present invention to prepare molybdenum sulfide / PTCDA / molybdenum sulfide heterojunction, and use this organic-inorganic heterojunction as channel material to prepare molybdenum sulfide / PTCDA transistor, the preparation process is as follows Figure 5 .

[0036] (1) 275nm silicon (Si) / silicon dioxide (SiO 2 ) as the substrate, the bulk crystals were mechanically exfoliated to obtain a few-layer n-type molybdenum disulfide (MoS 2 ). The polymethyl methacrylate (PMMA) photoresist was spin-coated, the spin-coating parameter was 600r / min, 5s+4000r / min, 60s, and the baking parameter was 150°C for 10min. The photolithography and development of the electrode pattern were carried out by electron beam exposure (EBL), and the developing solution was MIBK:IPA=1:3, at room temperature for 45s. Electron beam evaporation (EBE, E-Beam Evaporation) is used to deposit 20nm Ti / 50nm Pd to obtain a contact electrode, and a back gate molybdenum sulfide field effect...

Embodiment 3

[0040] With reference to the method of Example 2, replace PTCDA with C60 and pentacene ("Pentacene"), replace molybdenum sulfide with tungsten sulfide and highly oriented pyrolytic graphite ("HOPG"), and prepare 9 kinds of organic compounds with different raw materials respectively. Inorganic heterojunction field effect transistors.

[0041] The transfer characteristic curves before and after intercalation of different organic-inorganic combined field-effect transistors (FETs) are as follows: Figure 9 , it can be seen that, in addition to WS 2 / Pentacene, it can be seen from the transfer curve that the switching ratio decreases, an obvious N doping is seen, and the current rises, that is, organic and inorganic heterostructures are realized in the field effect transistors prepared.

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Abstract

The invention discloses a preparation method and application of an organic-inorganic heterojunction. The preparation method is characterized by adopting an electrochemical intercalation method, takinga two-dimensional organic molecule solution as an electrolyte and a two-dimensional inorganic crystal as a working electrode, constructing an electrochemical system, embedding the two-dimensional organic molecules with optical or electrical properties into the two-dimensional inorganic crystal under the current action, and obtaining an inorganic-organic-inorganic sandwich heterostructure. According to the method, the preparation of the organic-inorganic heterojunction is achieved, the prepared organic-inorganic heterojunction is of the inorganic-organic-inorganic sandwich structure, an inorganic protective layer is further arranged outside the organic layer and is not directly exposed outside, and when the organic-inorganic heterojunction is used for preparing the electronic devices, thesmall organic molecules cannot be damaged. The prepared organic-inorganic heterojunction can be used as a channel material of the electronic device, so that the contact barrier with an electrode can be effectively reduced or eliminated, and the device can have higher electron mobility.

Description

technical field [0001] The invention relates to a preparation method and application of an organic-inorganic heterojunction, and belongs to the technical field of two-dimensional material electronic devices. Background technique [0002] The integration of 2D van der Waals heterojunctions offers diverse structures without lattice-matching constraints, which is crucial for creating new frontiers of functional devices by design. In typical hybrid heterostructures or superlattices, the functions of organic molecules and their possible advantages for the final assembly remain to be explored. These potential functions include electronic or photonic properties of well-defined HOMO / LUMO structures in semiconductor molecules, magnetic molecules of molecular radicals or electron spins in specific coordination compounds, and nonlinear properties of asymmetric compounds, among others. Therefore, it is of great theoretical and practical significance to integrate these functional molecu...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/05H01L51/30H01L51/40C01G39/06
CPCC01G39/06C01P2002/82C01P2002/70C01P2004/03C01P2004/04C01P2004/01H10K71/125H10K85/621H10K10/486
Inventor 王欣然臧涵丁梦宁何雯
Owner NANJING UNIV
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