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Polymorphic high-stability resistive random access memory of all-inorganic perovskite thin film and preparation method of polymorphic high-stability resistive random access memory

A resistive memory, high-stability technology, applied in electrical components and other directions, can solve problems such as instability of resistive devices, and achieve the effects of good stability, stable performance and excellent performance.

Inactive Publication Date: 2020-05-08
WUHAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, the halide perovskites mainly studied are organic-inorganic hybrid materials, but due to the existence of organic groups, the resistive switching devices based on organic-inorganic hybrid perovskites are inherently unstable, and their performance is affected by water vapor and temperature. The influence of the larger, the prepared device has a higher volatility

Method used

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  • Polymorphic high-stability resistive random access memory of all-inorganic perovskite thin film and preparation method of polymorphic high-stability resistive random access memory
  • Polymorphic high-stability resistive random access memory of all-inorganic perovskite thin film and preparation method of polymorphic high-stability resistive random access memory
  • Polymorphic high-stability resistive random access memory of all-inorganic perovskite thin film and preparation method of polymorphic high-stability resistive random access memory

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034]1) Mix lead bromide and cesium bromide powders with a mass of 3.6701g and 2.1281g (molar ratio of 1:1), and grind for 1 hour to make the powders fully mixed; put the mixed powder mixture into a nitrogen atmosphere In the environment, the temperature was raised to 600°C at a heating rate of 6°C / min, and then the powder sample was heat-preserved and calcined for 24 hours, and light yellow CsPbBr was obtained after natural cooling. 3 powder;

[0035] 2) Add 0.3ml of dimethyl sulfoxide solution at 65°C to 0.05g of CsPbBr 3 In the powder, and stir slowly and evenly for 15 minutes to dissolve it completely;

[0036] 3) Spin-coat the configured solution at a speed of 3000 rpm on a substrate deposited with a metal platinum film with a thickness of 100 nanometers. The total time of spin coating is 60 seconds. After 10 seconds after the start of high-speed spin coating, add two Chlorobenzene solution was dropped; the prepared film was annealed at 120°C for 40 minutes in a nitrog...

Embodiment 2

[0043] 1) Mix lead bromide and cesium bromide powders with a quality of 3.6701g and 2.1281g, and grind for 1 hour to make the powders fully mixed; Heating rate, the temperature was raised to 600 ° C, and then the powder sample was calcined for 24 hours, and light yellow CsPbBr was obtained after natural cooling 3 powder;

[0044] 2) Add 0.3ml of dimethyl sulfoxide solution at 65°C to 0.05g of CsPbBr 3 In the powder, and stir slowly and evenly for 15 minutes to dissolve it completely;

[0045] 3) The configured solution is spin-coated on a substrate with a metal platinum thin film with a thickness of 100 nanometers at a speed of 4000 rpm. The total time of spin coating is 60 seconds. In the last 20 seconds of spin coating, add two drops of chlorobenzene solution; the prepared film was maintained at a temperature of 120 ° C for 40 minutes in a nitrogen environment, and CsPbBr was obtained after natural cooling 3 thin film, as the resistive layer of the resistive memory;

[0...

Embodiment 3

[0048] 1) Mix lead bromide and cesium bromide powders with a mass of 3.6701g and 2.1281g, and grind for 1 hour to make the powders fully mixed; put the well-mixed powder mixture into a nitrogen environment, and heat at 6°C / min The heating rate was increased to 400 ° C, and then the powder sample was calcined for 24 hours, and light yellow CsPbBr was obtained after natural cooling. 3 powder;

[0049] 2) Add 0.3ml of dimethyl sulfoxide solution at 65°C to 0.05g of CsPbBr 3 In the powder, and stir slowly and evenly for 15 minutes to dissolve it completely;

[0050] 3) The configured solution is spin-coated at a speed of 3000rpm on the substrate deposited with a metal platinum film with a thickness of 100 nm. The total time of spin coating is 60 seconds. In the last 10 seconds of spin coating, add two drops of chlorobenzene solution; the prepared film was maintained at a temperature of 120 ° C for 40 minutes in a nitrogen environment, and CsPbBr was obtained after natural coolin...

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Abstract

The invention discloses a polymorphic high-stability resistive random access memory of an all-inorganic perovskite thin film and a preparation method of the polymorphic high-stability resistive randomaccess memory. The preparation method comprises the following steps: preparing CsPbBr3 powder by utilizing a solid-phase reaction method, and dissolving the powder into a solvent to obtain a uniformsolution; selecting a proper substrate, depositing a layer of metal film on the surface of the substrate as a lower electrode material, performing spin-coating of the prepared solution on the substrate deposited with the lower metal electrode, and performing annealing in an inert gas environment (such as nitrogen or argon) to obtain a CsPbBr3 film resistive layer; and finally, depositing a metal electrode on the CsPbBr3 thin film by using a mask plate to serve as an upper metal electrode, thereby obtaining the resistive random access memory with high stability. By regulating and controlling the saturation current, the prepared resistive random access memory has a polymorphic characteristic. The resistive random access memory with the polymorphic and high-stability characteristics has the advantages of simple structure, economy, low consumption, excellent performance and good stability.

Description

technical field [0001] The invention relates to the field of semiconductor materials and non-volatile memory, in particular to an all-inorganic perovskite CsPbBr based 3 A method for preparing a thin-film resistive memory with multi-state and high stability characteristics. Background technique [0002] Resistive memory has the characteristics of low power consumption, high integration density, fast transition speed, multi-state storage capability, and non-volatility, and is considered to be the most promising memory technology in the future. The structure of the resistive memory generally has a sandwich structure of upper metal electrode / resistive memory layer / lower metal electrode, and data storage is realized by adjusting the size and amplitude of the working voltage. At present, many devices made of perovskite materials exhibit resistive storage characteristics, such as SrTiO 3 , BaTiO 3 and BiFeO 3 Wait. However, resistive switching devices based on traditional per...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L45/00
CPCH10N70/881H10N70/021H10N70/011
Inventor 刘雍朱媛媛王红军程鹏伟熊锐
Owner WUHAN UNIV
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