Perovskite light absorption layer thin film, preparation method thereof and solar cell using perovskite light absorption layer thin film
A solar cell and light-absorbing layer technology, applied in the field of solar cells, can solve the problems of lowering the preparation temperature of perovskite, poor stability, and not mentioned, and achieve the effects of shortening energy, reducing annealing temperature, and avoiding reactions
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Embodiment 1
[0063] In this embodiment, a method for preparing a perovskite light-absorbing layer film is provided, the preparation method comprising the following steps:
[0064] (1) Dissolve the mixture of lead iodide and cesium iodide with a molar ratio of 1:1 in N,N-dimethylformamide to obtain CsPbI with a concentration of 0.5mol / L 3 solution, stirred at 50°C for 5h, then added with a concentration of 48% hydrobromic acid, and reacted at 50°C for 10h to obtain the perovskite precursor solution, wherein the concentration of hydrohalic acid in the perovskite precursor solution was 35 μL / mL;
[0065] (2) Spin-coat poly(3,4-ethylenedioxythiophene)-polystyrenesulfonic acid solution on the surface of ITO glass at 4000rpm, and heat at 150°C in air for 10min to obtain poly(3,4-ethylenedioxythiophene) Dioxythiophene)-polystyrene sulfonic acid film, and then the perovskite precursor solution obtained in step (1) was spin-coated onto poly(3,4-ethylenedioxythiophene)-poly(3,4-ethylenedioxythiophe...
Embodiment 2
[0069] In this embodiment, a method for preparing a perovskite light-absorbing layer film is provided, the preparation method comprising the following steps:
[0070] (1) Dissolve the mixture of lead iodide and cesium iodide with a molar ratio of 1:1 in N,N-dimethylformamide to obtain CsPbI with a concentration of 0.5mol / L 3 solution, stirred at 60°C for 12h, then added hydrobromic acid with a concentration of 48%, and reacted at 60°C for 1h to obtain the perovskite precursor solution, wherein the concentration of hydrohalic acid in the perovskite precursor solution was 30 μL / mL;
[0071] (2) Spin-coat poly(3,4-ethylenedioxythiophene)-polystyrenesulfonic acid solution on the surface of ITO glass at 3000rpm, and heat at 150°C in air for 10min to obtain poly(3,4-ethylenedioxythiophene) Dioxythiophene)-polystyrene sulfonic acid film, and then spin-coat the perovskite precursor solution obtained in step (1) onto poly(3,4-ethylenedioxythiophene)-poly(3,4-ethylenedioxythiophene)-po...
Embodiment 3
[0075] In this embodiment, a method for preparing a perovskite light-absorbing layer film is provided, the preparation method comprising the following steps:
[0076] (1) A mixture of lead iodide and cesium iodide with a molar ratio of 1:1 is dissolved in dimethyl sulfoxide to obtain CsPbI with a concentration of 0.5mol / L 3 solution, stirred at 25°C for 25h, then added hydriodic acid with a concentration of 48%, and reacted at 60°C for 1h to obtain the perovskite precursor solution, wherein the concentration of hydrohalic acid in the perovskite precursor solution was 30 μL / mL;
[0077] (2) Spin-coat poly(3,4-ethylenedioxythiophene)-polystyrenesulfonic acid solution on the surface of ITO glass at 3000rpm, and heat at 150°C in air for 10min to obtain poly(3,4-ethylenedioxythiophene) Dioxythiophene)-polystyrene sulfonic acid film, and then spin-coat the perovskite precursor solution obtained in step (1) onto poly(3,4-ethylenedioxythiophene)-poly(3,4-ethylenedioxythiophene)-polys...
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