Preparation process of solar cell

A solar cell and preparation process technology, applied in the field of solar cells, can solve the problems of affecting solar cell current, serious absorption, etc., and achieve the effects of improving photoelectric conversion efficiency, improving minority carrier life, and reducing metal-semiconductor contact with minority carrier recombination

Inactive Publication Date: 2020-04-24
JA SOLAR +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the disadvantage of this P-type passivated contact cell is that the doped polysilicon layer absorbs the incident light more seriously, and the generated electron-hole pairs recombine in a large number in the polysilicon layer, which affects the current of the solar cell.

Method used

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  • Preparation process of solar cell
  • Preparation process of solar cell

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preparation example Construction

[0080] In the preparation process of the above-mentioned solar cell:

[0081] Preferably, the silicon substrate in step S1 is a P-type silicon wafer.

[0082] Before the silicon substrate 1 is provided with a doped silicon layer, the silicon substrate 1 is textured and a P-N junction 2 is formed. The P-N junction 2 can be formed by means of thermal diffusion, ion implantation and annealing. For P-type silicon wafers, the diffusion is phosphorus diffusion.

[0083] After the P-N junction 2 is made, the back of the silicon substrate is leveled, and the phosphosilicate glass on the front of the silicon substrate is removed, and then a tunneling passivation layer 3 is provided on at least one surface of the diffused silicon substrate.

[0084] Preferably, a tunneling passivation layer 3 is provided on at least one surface of the diffused silicon substrate, and then an intrinsic silicon layer 4 is provided on the tunneling passivation layer 3, and the intrinsic silicon layer 4 ca...

Embodiment 1

[0109] This embodiment provides a PERC cell with a local Topcon contact structure on the light-receiving surface. In this solar cell, a local doped silicon structure is arranged on the light-receiving surface of the PERC cell. The preparation steps are as follows:

[0110] A. Surface texturing: Provide silicon substrate 1, choose P-type monocrystalline silicon wafer for silicon substrate 1, its volume resistivity is 2.0Ω·cm, complete the surface texturing of silicon wafer, and the surface reflectance of single crystal silicon wafer is 13%;

[0111] B. Clean silicon wafers to prepare P-N junctions: P-N junctions 2 are prepared by furnace tube phosphorus diffusion, and the emitter square resistance is 80-100Ω / □;

[0112] C. Leveling the back surface of the silicon wafer: corrode the back surface in a mixed solution of nitric acid, sulfuric acid and hydrofluoric acid to reduce the specific surface area of ​​the back surface of the silicon wafer, and remove the front phosphosilicat...

Embodiment 2

[0125] This embodiment provides a double-sided partial Topcon cell, that is, a local doped silicon structure is arranged on the front and back of the solar cell. The preparation steps of the double-sided partial Topcon cell are as follows:

[0126] A. Surface texturing: Provide silicon substrate 1, choose P-type monocrystalline silicon wafer for silicon substrate 1, its volume resistivity is 2.0Ω·cm, complete the surface texturing of silicon wafer, and the surface reflectance of single crystal silicon wafer is 13%;

[0127] B. Cleaning silicon wafers to prepare P-N junctions: P-N junctions 2 are obtained by phosphor diffusion in furnace tubes, and the emitter square resistance is 80-100 Ω / □;

[0128] C. Leveling the back surface of the silicon wafer: corrode the back surface in a mixed solution of nitric acid, sulfuric acid and hydrofluoric acid to reduce the specific surface area of ​​the back surface of the silicon wafer, and remove the front phosphosilicate glass layer (PSG)...

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Abstract

The invention discloses a preparation process of a solar cell. The preparation process comprises the steps of S1 arranging a doped silicon layer on at least one surface of a silicon substrate; S2 irradiating a preset region of the doped silicon layer by adopting laser, and forming a doped source-containing silicon oxide protection layer in the preset region of the doped silicon layer; and S3 removing the doped silicon layer which does not form the region of the doped source-containing silicon oxide protection layer, and forming a local doped silicon layer on at least one surface of the siliconsubstrate. The process utilizes laser local scanning to complete local silicon layer doping, and the process is simple and feasible.

Description

technical field [0001] The invention belongs to the technical field of solar cells, and in particular relates to a preparation process of solar cells. Background technique [0002] The crystalline silicon PERC cell structure is the mainstream direction of silicon-based solar cell technology development. For PERC battery technology, the excellent passivation of the aluminum oxide film on the back surface of the P-type battery makes it very responsive to long-wave light, and the photoelectric conversion efficiency of this battery can reach more than 22%. At this time, the severe minority carrier recombination at the contact between the metal electrode and the silicon wafer on the light-receiving surface (front side, also called the front surface) of the battery sheet becomes a bottleneck that limits the further improvement of the battery efficiency. Therefore, trying to reduce or even eliminate the contact area between the metal on the light-receiving surface and the semicond...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L31/068H01L31/0224
CPCH01L31/0684H01L31/182H01L31/022425Y02E10/547Y02P70/50Y02E10/546
Inventor 陈孝业蒋秀林
Owner JA SOLAR
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