Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Reworking method for acid etching polycrystalline battery

A technology of acid texturing and batteries, which is applied in the direction of polycrystalline material growth, chemical instruments and methods, sustainable manufacturing/processing, etc. It can solve the problems of appearance and color difference, achieve uniform suede, reduce state differences, and reduce the proportion of color difference films Effect

Active Publication Date: 2019-11-29
WUXI SUNTECH POWER CO LTD
View PDF7 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to overcome the above disadvantages, provide a rework method for acid-textured polycrystalline cells, improve the photoelectric conversion efficiency of the reworked sheet, and solve the problems of appearance color difference and the like
[0006] In order to improve the photoelectric conversion efficiency of reworked sheets and solve the problems of color difference in appearance, the present invention has developed a rework method for acid-textured polycrystalline cells. The rework process is as follows: image 3 As shown, it is suitable for the production of acid textured polycrystalline reworked sheets

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Reworking method for acid etching polycrystalline battery
  • Reworking method for acid etching polycrystalline battery
  • Reworking method for acid etching polycrystalline battery

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] For the reworked wafers produced in the texturing process, put them in a diffusion furnace for annealing treatment, set the temperature at 450°C, set the time for 20 minutes, and set the maximum nitrogen flow rate at 1000mL / min. Through this pretreatment, the residues on the surface of the silicon wafers after the first texturing process are removed. Organic matter, and then match the MCCE texturing process.

Embodiment 2

[0034] For the reworked sheet produced in the diffusion process, the phosphosilicate glass on the surface of the reworked sheet can be removed by HF solution, and the MCCE texturing is carried out after pretreatment, the HF volume concentration is 5%, and the reaction time is 150s.

Embodiment 3

[0036] For the reworked sheet produced in the PECVD process, the SiNx on the surface of the reworked sheet can be removed by HF / HCl mixed acid solution, and the MCCE texturing is performed after pretreatment, the volume concentration of HF is 2%, the volume concentration of HCl is 3%, and the reaction time is 300s.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a reworking method for an acid etching polycrystalline battery, which belongs to the technical field of photoelectricity. The method is used for producing an acid etching polycrystalline reworked wafer, bad wafers generated in etching, diffusion, acid etching and PECVD procedures are collected, differentiation pretreatment is carried out on the reworked wafers generated indifferent procedures, and then a metal catalytic chemical etching (MCCE) method is adopted for etching. The differentiation pretreatment scheme is selected for a reworked wafer generated in a different procedure, the surface state difference of the reworked wafer is reduced, and uniform etched surfaces can be obtained after the reworked wafers are etched again. 200-800 nanometer holes are formedin the surface of the reworked wafer through MCCE, the cell is further prepared through a subsequent processing procedure, the surface reflectivity of a silicon wafer can be greatly reduced, the photoelectric conversion efficiency is further improved, meanwhile, a more uniform etched surface can be obtained, and the proportion of a chromatic aberration wafer is reduced.

Description

technical field [0001] The invention relates to a rework method for acid-textured polycrystalline batteries, in particular to a rework method for improving the photoelectric conversion efficiency of a rework sheet, and belongs to the field of photoelectric technology. Background technique [0002] In terms of crystal silicon slicing technology, compared with the traditional mortar wire cutting technology, the diamond wire cutting technology has the advantages of fast cutting speed, environmentally friendly cutting fluid, and low single-chip loss. As a result, the silicon cost of silicon wafers has been greatly reduced, and the market share has increased year by year. At present, it has gradually replaced mortar wire-cut silicon wafers. In terms of polycrystalline cell technology, polycrystalline diamond wire-cut silicon wafers have the characteristics of shallow damage, high reflectivity, and groove structure. By hydrofluoric acid / nitric acid (HF / HNO 3 ) adding auxiliary a...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0236H01L31/18C30B29/06C30B33/02C30B33/10
CPCC30B29/06C30B33/02C30B33/10H01L31/02366H01L31/1804H01L31/1864Y02E10/547Y02P70/50
Inventor 孙腾缪若文管高飞沙忠宇徐明靖
Owner WUXI SUNTECH POWER CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com