Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for reducing surface reflectivity of texture mono-crystalline silicon chip

A technology of surface reflectivity and monocrystalline silicon wafers, applied in sustainable manufacturing/processing, electrical components, climate sustainability, etc., can solve the problems of complex process, high cost, unfavorable mass production, etc., and achieve simple operation, Low cost and suitable for large-scale production

Inactive Publication Date: 2009-12-23
EOPLLY NEW ENERGY TECH
View PDF0 Cites 10 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the method of mask reactive ion etching is complex in process and high in cost, which is not conducive to mass production.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0012] This specific embodiment adopts the following technical scheme: put the monocrystalline silicon wafer with the suede surface made through alkali etching into the plasma etching equipment for maskless plasma etching, thereby further reducing the surface reflection of the monocrystalline silicon wafer Rate.

[0013] The gas is carbon tetrafluoride (CF 4 ) and oxygen (O 2 ), the flow ratio of the two is between 10:1-1:3, and the pressure range in the processing chamber is 1-20Pa.

[0014] The invention uses a radio frequency power source to activate gas ionization to generate plasma, the radio frequency frequency is 13.56MHz, and the power is between 400-600W.

[0015] Preferably, the plasma etching time of the present invention is 5-20 minutes, and after the single-crystal silicon wafer is plasma-etched, the thinning amount (mass difference before and after etching) of each wafer is between 0.1-0.5 g.

[0016] Put the monocrystalline silicon quasi-square sheet with a s...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a method for reducing the surface reflectivity of a texture mono-crystalline silicon chip, relating to the technical range and field of preparation of solar cells. A mono-crystalline silicon chip with a texture made by alkaline corrosion is put into a plasma etching device to implement non-mask plasma etching so as to further reduce the surface reflectivity of the texture mono-crystalline silicon chip. Gas used for etching is a mixed gas of CF4 and O2 with the flow portion ranging from 10:1 to 1:3, and the pressure in the treatment chamber ranges from 1Pa to 20Pa. The invention further reduces the surface reflectivity of the texture mono-crystalline silicon chip, and provides a feasible way to further improve the conversion efficiency of the solar cell. The method is characterized by simpleness, convenience, effectiveness, low cost, easy operation, no need of additional equipment and suitability for large-scale production.

Description

Technical field: [0001] The invention relates to the technical scope and field of preparing solar cells, in particular to a method for reducing the surface reflectance of a textured single crystal silicon wafer in the preparation technology of single crystal silicon solar cells. Background technique: [0002] For any type of solar cell to occupy a place in the PV market, it needs to continuously improve its photoelectric conversion efficiency. For conventional crystalline silicon solar cells, it is an important, feasible and effective way to improve the conversion efficiency of solar cells by improving the spectral response of solar cells, improving solar light absorption, and reducing the surface reflectance of solar cells while controlling the thickness of silicon wafers. . [0003] At present, in the production of conventional monocrystalline silicon solar cells, the method of preparing textured surfaces by alkali etching is often used to reduce the surface reflectance o...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18
CPCY02P70/50
Inventor 屈盛汤叶华
Owner EOPLLY NEW ENERGY TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com