High-gain and low-noise mixer integrated circuit

An integrated circuit and mixer technology, applied in the field of mixer integrated circuits, can solve the problems of high noise and low gain, and achieve the effects of reducing noise, improving gain, and flexible circuit configuration functions.

Pending Publication Date: 2019-11-22
许昌富奥星智能科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] In order to solve the technical problems of low gain and high noise in existing radio frequency integrated circuits, especially in zero-IF systems, the present invention provides a high-gain, low-noise mixer integrated circuit

Method used

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  • High-gain and low-noise mixer integrated circuit
  • High-gain and low-noise mixer integrated circuit
  • High-gain and low-noise mixer integrated circuit

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0052] Example: such as figure 2 As shown, the principle diagram of this embodiment includes: the first MOS transistor M1, the second MOS transistor M2, the third MOS transistor M3, the fourth MOS transistor M4, the fifth MOS transistor M5, the sixth MOS transistor M6, the seventh MOS transistor MOS transistor M7, eighth MOS transistor M8, ninth MOS transistor M9, tenth MOS transistor M10, first capacitor C1, second capacitor C2, third adjustable capacitor C3, fourth adjustable capacitor C4, first inductive element L1, the second inductor L2, the first resistor R1, and the second resistor R2; wherein:

[0053] The gate of the first MOS transistor M1 is connected to the first end of the first capacitor C1 as the RF non-inverting input end of the mixer, and the gate of the second MOS transistor M2 is connected to the first end of the second capacitor C2 as a mixer The RF inverting input terminal;

[0054] The source of the first MOS transistor M1 is connected to the second en...

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Abstract

The invention relates to a high-gain and low-noise mixer integrated circuit, which solves the technical problems of lower gain and higher noise in the existing radio frequency integrated circuit, especially in a zero intermediate frequency system. The mixer comprises an input transconductance stage, a switch stage, a load stage and a negative resistance network. The first resistor and the second resistor are increased. The gain is greatly improved. Meanwhile, the tuning network is added. The switching of the working frequency band of the mixer is achieved by adjusting the voltage of the capacitor control port and the voltage of the resistor control port, and output has extremely low flicker noise. An inductive element and a cross-coupled capacitor are added to the input transconductance stage of the mixer, so that the gain is further improved, and the thermal noise of the circuit is reduced. Two types of noise are respectively reduced through two modes, and extremely low-frequency noise at the output end is realized, so that the low-frequency noise amplifier can be applied to the field of low-voltage, low-power consumption and high-sensitivity radio frequency integrated circuits, particularly receiver down-conversion circuit systems.

Description

technical field [0001] The invention relates to a radio frequency circuit, in particular to a high-gain, low-noise mixer integrated circuit. Background technique [0002] With the development of radio frequency integrated circuit technology and technology, radio frequency integrated circuits are used in communication, radar and other fields to replace traditional PCB discrete component radio frequency circuits. In the radio frequency transmission and reception system, after the receiver receives the modulated radio frequency signal, it needs to demodulate the signal. As an important module of down conversion, the mixer needs to have the characteristics of high gain, low noise and high isolation. [0003] Due to the low cost of the silicon-based integrated circuit CMOS process, the scale of use is large, but its noise at low frequencies is larger than other processes, especially when the process size reaches sub-micron level, the noise mainly comes from the MOS tube when it i...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03D7/16
CPCH03D7/16
Inventor 李秀萍杨农军陈德阳
Owner 许昌富奥星智能科技有限公司
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