Manufacturing method of transistor
A manufacturing method and transistor technology, which are applied in semiconductor/solid-state device manufacturing, semiconductor device, photoengraving process coating equipment, etc., can solve the problems of large discreteness and large parasitic elements, improve uniformity and reduce parasitic elements the effect of
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[0032] Hereinafter, the present invention will be further described in detail through specific embodiments in conjunction with the drawings.
[0033] In the prior art, the process method of the double-gate structure of the thin film transistor determines that the top gate electrode and the bottom gate electrode cannot be accurately aligned, which results in a large parasitic capacitance of the transistor, which limits its performance. The present invention adopts an opaque design when fabricating the bottom gate electrode. For example, an opaque material can be used. When the substrate, the top gate electrode, and the layers between the bottom gate electrode and the top gate electrode are fabricated, a transparent design is adopted. The design of light characteristics, for example, can adopt light-transmitting materials or design the thickness to make it have light-transmitting characteristics; when the top gate electrode pattern is formed by photolithography, the bottom gate elec...
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