Power amplifier synthesized by high-gain distributed transformer

Abstract

The invention discloses a power amplifier synthesized by a high-gain distributed transformer. The amplifier comprises an input single-ended to differential network, a first stacked differential amplification network, a second stacked differential amplification network, a third stacked differential amplification network, a fourth stacked differential amplification network, a distributed transformerelectrical network, and first to fourth drain bias networks connected with the distributed transformer electrical network. According to the invention, the core architecture adopts the first to fourthstacked differential amplification networks; the good parasitic parameter rejection of the differential amplifier is utilized, the high-power gain characteristic of the stacked transistors is utilized, and the good power synthesis characteristic of the distributed transformer electrical network is combined, so that the whole power amplifier obtains good high gain, high efficiency and high power output capability.

Description

technical field [0001] The invention relates to field effect transistor radio frequency power amplifiers and the field of integrated circuits, in particular to a high-gain distributed transformer-combined power amplifier applied to a transmitting module at the end of a radio frequency microwave transceiver. Background technique [0002] With the rapid development of wireless communication systems and RF microwave circuits, RF front-end transceivers are also developing in the direction of high performance, high integration, and low power consumption. Therefore, the market urgently needs the radio frequency and microwave power amplifier of the transmitter to have high output power, high gain, high efficiency, low cost and other performances, and the integrated circuit is the key technology that is expected to meet the market demand. [0003] However, when using integrated circuit technology to design and implement RF and microwave power amplifier chip circuits, its performance...

AI Technical Summary

Problems solved by technology

[0004] (1) High power and high efficiency capabilities are limited: Traditional power amplifiers use a multi-channel parallel combination structure or a distributed structure. The combination efficiency of these two structures is limited, resulting in part of the power loss in the combination network, which limits high power. , high efficiency capability

[0005] (2) Low power consumption, high gain amplification capability is limited: the power amplifier of the traditional single-ended common source transistor is affected by the parasitic parameters of the transistor, the gain is low when working at high frequency, and the power capability is greatly limited at the same time, so as to achieve low power consumption more difficult

[0007] ①The output impedance of the traditional multi-stage, multi-channel synthesis single-ended power amplifier adopts the multi-channel parallel combination structure, so the output synthesis network needs to achieve impedance matching with high impedance transformation ratio, which often needs to sacrifice the gain of the amplifier and reduce the power. thus limiting the high power, high efficiency capability

[0008] ②In the traditional multi-stage, multi-channel synthesis single-ended power amplifier, in order to improve the influence of amplifier gain and isolation, the Cascode transistor amplification structure is also used. However, although the Cascode transistor increases the circuit isolation, the gain cannot be significantly deteriorated with frequency. , and the best impedance matching between Cascode dual transistors cannot be achieved, which reduces the output power characteristics

[0009] It can be seen from this that the design difficulties of high-gain and high-power amplifiers based on integrated circuit technology are: high power and high efficiency output is difficult; there are many limitations in the traditional single transistor structure or the multi-channel synthesis structure of Cascode transistors

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