A kind of ytterbium oxychloride nanosheet and its preparation method and application

A technology of ytterbium oxychloride and nanosheets, which is applied in the field of inorganic semiconductor materials, can solve problems such as the impact of application range, long reaction time, and high equipment requirements, and achieve the effects of convenient operation, fast reaction speed, and stable chemical properties

Active Publication Date: 2021-08-10
THE NAT CENT FOR NANOSCI & TECH NCNST OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, for MOX materials, there are only a small amount of reports on the preparation method of ferric oxychloride in the prior art, specifically in the case of argon as a protective gas, Fe 2 o 3 and anhydrous FeCl 3 The powder is fully mixed with a molar ratio of 4:3, then vacuumed to seal it in a quartz tube, and baked at 380°C for one week
The reaction time of this method is too long, and it needs to be carried out under vacuum conditions, which requires high equipment, increases costs, and the obtained product is a three-dimensional structure, not a two-dimensional layered structure, which has a certain impact on its application range

Method used

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  • A kind of ytterbium oxychloride nanosheet and its preparation method and application
  • A kind of ytterbium oxychloride nanosheet and its preparation method and application
  • A kind of ytterbium oxychloride nanosheet and its preparation method and application

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Experimental program
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Effect test

Embodiment 1

[0039] The present embodiment provides a kind of YbOCl nano sheet, and its preparation method specifically comprises the following steps:

[0040] (1) Add 0.5g Yb 2 o 3 , 0.5gYbCl 3 ·6H 2 O and 0.05g NaCl are mixed evenly, placed in a quartz boat, and the clean double-sided polished sapphire substrate is buckled on the quartz boat loaded with uniformly mixed powder;

[0041] (2) Place the quartz boat carrying the double-sided sapphire substrate in the middle of the quartz tube of the single-temperature zone tube furnace, and then repeatedly clean the quartz tube with argon, then raise the furnace temperature to 760 within 30 minutes. ℃, keep the flow rate of the carrier gas Ar at 120 sccm, grow for 30 minutes and then cool down to room temperature naturally to obtain YbOCl nanosheets grown on the sapphire substrate.

Embodiment 2

[0043] The present embodiment provides a kind of YbOCl nano sheet, and its preparation method specifically comprises the following steps:

[0044](1) Add 0.5g Yb 2 o 3 , 0.5gYbCl 3 ·6H 2 O and 0.1g NaCl are mixed evenly, placed in a quartz boat, and the clean double-sided polished sapphire substrate is buckled on the quartz boat loaded with uniformly mixed powder;

[0045] (2) Place the quartz boat carrying the double-sided sapphire substrate in the middle of the quartz tube of the single-temperature zone tube furnace, and then repeatedly clean the quartz tube of the single-temperature zone tube furnace with argon, and within 30 minutes Raise the furnace temperature to 780°C, keep the flow rate of the carrier gas (argon) at 150 sccm, grow for 30 minutes and then cool down to room temperature naturally to obtain YbOCl nanosheets grown on the sapphire substrate.

Embodiment 3

[0047] The present embodiment provides a kind of YbOCl nano sheet, and its preparation method specifically comprises the following steps:

[0048] (1) Add 0.45g Yb 2 o 3 , 0.5gYbCl 3 ·6H 2 O and 0.1g NaCl are mixed evenly, placed in a quartz boat, and the clean double-sided polished sapphire substrate is buckled on the quartz boat loaded with uniformly mixed powder;

[0049] (2) Place the quartz boat carrying the double-sided sapphire substrate in the middle of the quartz tube of the single-temperature zone tube furnace, and then repeatedly clean the quartz tube of the single-temperature zone tube furnace with argon, and within 30 minutes Raise the furnace temperature to 750°C, keep the flow rate of the carrier gas (argon) at 120 sccm, grow for 40 minutes and cool down to room temperature naturally to obtain YbOCl nanosheets grown on the sapphire substrate.

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Abstract

The present invention provides a nanosheet of ytterbium oxychloride and its preparation method and application. The preparation method comprises: taking ytterbium oxide and ytterbium chloride hexahydrate as raw materials, adding sodium chloride, and performing a chemical vapor deposition reaction to obtain the chlorine Ytterbium oxide nanosheets. The preparation method of the invention has simple process, fast reaction speed and low cost, and the prepared ytterbium oxychloride (YbOCl) nano sheet has large area, high purity, good crystallinity and stable chemical properties. The ytterbium oxychloride (YbOCl) nanosheets prepared by the present invention can be applied in aspects such as battery electrode materials or intercalation materials.

Description

technical field [0001] The invention relates to the technical field of inorganic semiconductor materials, in particular to a nanosheet of ytterbium oxychloride and its preparation method and application. Background technique [0002] In recent years, two-dimensional layered materials have attracted the attention of researchers all over the world due to their great application prospects in next-generation electronic and optoelectronic devices such as field effect transistors, memories, and photodetectors. Although more than 5,600 materials are defined as layered materials, the current research on two-dimensional layered materials is mainly focused on other "star" materials such as graphene, transition metal sulfides, black phosphorus, and boron nitride. However, these "star" materials still face problems such as uncontrollable preparation, instability, and poor electrical properties, which limit their application in real life. [0003] Recently, two-dimensional oxygen-contai...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01F17/259C01F17/10H01M4/48H01M4/58B82Y40/00
CPCB82Y40/00C01F17/00C01P2004/24H01M4/48H01M4/582Y02E60/10
Inventor 何军姚雨雨张玉王振兴
Owner THE NAT CENT FOR NANOSCI & TECH NCNST OF CHINA
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