Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Preparation method of silicon carbene and method for preparing hydrogen by photodecomposition of water vapor

A silicene and photolysis technology, applied in the semiconductor field, can solve the problems of disordered charge, system collapse, low water splitting efficiency, etc.

Active Publication Date: 2019-08-30
武汉楚能电子有限公司
View PDF5 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0011] (1) The problem of the low efficiency of traditional water splitting is that the charge is disordered, so that there is not enough spin electron-hole formation when splitting water
[0012] (2) The general semiconductor composite material system is sulfide + semiconductor, or dye-sensitized semiconductor, these systems are easy to decompose and fail when the water temperature is higher than 30 degrees Celsius, and the system collapses

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of silicon carbene and method for preparing hydrogen by photodecomposition of water vapor
  • Preparation method of silicon carbene and method for preparing hydrogen by photodecomposition of water vapor
  • Preparation method of silicon carbene and method for preparing hydrogen by photodecomposition of water vapor

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0056] Such as figure 1 As shown, the preparation method of silicene provided in the embodiment of the present invention includes the following steps:

[0057] S101: Weigh 500g of high-purity graphene and silicene, and weigh 0.1g of nano-silicon carbide powder and 1mg of gallium and iron nano-powder, place in a mechanical stirrer, add acetone, airtight, stir for 2 hours, and let stand After 72 hours, take it out and dry it in a vacuum oven at 100° C. for 24 hours.

[0058] S102: The mixed sample is placed in a graphite boat, and the graphite boat loaded with a mixture of silicene, graphene and nano-silicon carbide is placed on the sample seat of the sample reaction chamber.

[0059] S103: The reaction chamber is composed of a cylindrical stainless steel barrel with a diameter of 100 cm and a height of 200 cm. The sample seat is located at the center of the bottom of the steel barrel. There is a frequency conversion heating furnace at the bottom of the sample seat, on a horizo...

Embodiment 1

[0088] Deposit a cobalt-iron alloy layer on the surface of silicon carbene particles by photodeposition to obtain cobalt-iron-silicon carbene nanoparticles with a mass fraction of 0.05-2.0% of the cobalt-iron alloy layer, and then soak the Co-Fe-silicon carbene nanoparticles in 0.05- 0.5mmol / L dye-methanol solution, put it in a dark place for 48-72 hours, filter it, rinse it with deionized water 5-10 times, place it in a vacuum drying oven, and dry it at 80-200°C for 12-24 hours. Dye-sensitized Co-Fe-siliconene nanoparticles were obtained. Dye-sensitized Co-Fe-silicon carbene nanoparticles (0.002-0.005 g) are added to a 150 ml volume concentration of 10-20% triethanolamine (TEOA) or methanol and triethanolamine aqueous solution reactor, The volume of the solution is 10-30ml, the sample solution is ultrasonically sonicated for 5-30 minutes, and the argon gas is passed for 10-60 minutes, so far a uniform Co-Fe-silicon carbene nanoparticle colloidal suspension without oxygen is o...

Embodiment 3

[0096] The doped preparation of silicene can be obtained by the following steps,

[0097] 1) Weigh 10g of self-made silicon carbene, divided into 2g, 2g, 2G, 2g and 2g;

[0098] 2) Implanting Cr, Fe, Ru, La and Yb into these 5 samples of the same weight by ion implantation method to obtain five kinds of doped silicene materials. The doping amount of these elements is maintained at 10 16 cm 3 . no more than 10 18 cm 3 .

[0099] 3) Experiments of photocatalytic water splitting to generate hydrogen were carried out with these five doped silicene materials.

[0100] 4) Weigh 2-5 mg of these 5 kinds of samples respectively, each kind has 30 samples, and carry out the test of photocatalytic water splitting to generate hydrogen. The data shows that La, Ru, Fe, and Yb show high hydrogen production rate, while Cr shows the effect of hydrogen production, but the hydrogen production rate is much lower than the first four.

[0101] Table 3 Effects of photocatalytic water splittin...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention belongs to the technical field of semiconductors, and discloses a preparation method of silicon carbene and a method for preparing hydrogen by photodecomposition of water vapor. The preparation method of the silicon carbene comprises the following steps: weighing high-purity graphene and silene, placing a mixed sample in a graphite boat, attaching four magnetic tiles to the insides of four quadrants obtained by cylindrical division of a reaction chamber to generate a static magnetic field, and adding a group of coils on the periphery of the static magnetic field to generate a high-frequency electromagnetic field; and after sample reaction is carried out through a sample chamber, switching off a laser power supply, an electric furnace heating power supply and a high-frequencyelectromagnetic field power supply, naturally cooling, and collecting the product of the sample chamber as the silicon carbene. The silicon carbene can grow under the conditions that the silene and the graphene are irradiated by laser at a high temperature, the silicon carbide serves as an induction factor and the silicon carbene further grows through radiation weakening of secondary laser, and the growth is crystal growth of a basic unit layer of the silicon carbide, and the novelty of the semiconductor material shows that the bandwidth changes along with components.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to a method for preparing silicene and a method for preparing hydrogen by photodecomposing water vapor and water. Background technique [0002] At present, the existing technologies commonly used in the industry are as follows: [0003] Sicarbene is a crystal grown in a silicon carbide unit layer that has not been found in natural crystals on the earth. At present, the earth's population is expanding. China's population may exceed 1.6 billion in this century, Africa's population will exceed 1.5 billion, and India's population may exceed 1.5 billion. The life that human beings want poses a challenge to the consumption of existing resource reserves and the bearing capacity of the earth. , emit a large amount of waste gas, among which the number of cars in various countries exceeds 1 billion. The exhaust gas emitted every day is the source of air pollution on the ea...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C01B32/984B01J27/224B01J35/00C01B3/04
CPCC01B32/984B01J27/224C01B3/045C01B2203/1047C01B2203/1082B01J35/39Y02E60/36
Inventor 张洪涛夏耀威范例张泽森
Owner 武汉楚能电子有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com