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High-quality zinc stannate single-crystal film and preparation method thereof

A technology of single crystal thin film, zinc stannate, applied in the direction of single crystal growth, single crystal growth, chemical instruments and methods, etc., can solve the limitation of application, lack of research progress, lack of basic research such as electrical properties of single crystal thin film materials, etc. question

Active Publication Date: 2019-08-27
SHANDONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Zn has not been seen so far 2 SnO 4 Reports on single crystal materials
[0006] (2) Most of the doping research on zinc stannate focuses on the modulation of material bandgap and photoresponse, the improvement of photocatalytic and luminescent properties, and there are few research reports on the electrical properties of materials
[0007] (3) Zinc stannate, as an oxide wide-bandgap semiconductor material, has not made any progress in the field of semiconductor electronic devices. Applications in the field of semiconductor optoelectronic devices

Method used

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  • High-quality zinc stannate single-crystal film and preparation method thereof
  • High-quality zinc stannate single-crystal film and preparation method thereof
  • High-quality zinc stannate single-crystal film and preparation method thereof

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preparation example Construction

[0018] According to the present invention, the preparation method of above-mentioned zinc stannate single crystal thin film comprises:

[0019] Zinc stannate target is provided as raw material, and zinc stannate film is grown on the substrate by pulsed laser deposition;

[0020] The zinc stannate thin film is heat-treated to obtain the zinc stannate single crystal thin film.

[0021] According to the present invention, preferably, the zinc stannate target material is Zn 2 SnO 4 The powder is obtained by compression molding and high temperature firing;

[0022] Preferably, the pressing pressure is 40MPa-70MPa, and the high-temperature firing temperature is 1100°C-1300°C.

[0023] Zinc stannate target material, a preferred preparation scheme, includes the following steps:

[0024] 99.99% pure Zn 2 SnO 4 The powder is pressed into a compact under a pressure of 40MPa-70MPa in a hydraulic press, and then sintered at 1100°C-1300°C for 2-4 hours to make a zinc stannate ceramic ...

Embodiment approach

[0054] According to the present invention, the preparation method of zinc stannate single crystal thin film, a kind of preferred embodiment, steps are as follows:

[0055] (1) Place the zinc stannate target material and the cleaned magnesium oxide (100) substrate in the corresponding positions of the target base in the reaction chamber respectively, and pump the PLD reaction chamber into a high vacuum state with a vacuum degree of 8×10 -5 Pa~1×10 -4 Pa, the substrate is heated to a growth temperature of 500°C-750°C;

[0056] (2) Open the valve of the oxygen cylinder, feed oxygen into the reaction chamber, the oxygen flow rate is 10-30sccm, adjust the pressure of the reaction chamber to be 5-30Pa, and keep for 20-30 minutes;

[0057] (3) Turn on the laser and adjust the laser to a stable energy mode, with a single pulse energy of 150-350 mj, a burst length of 20 ns, and a pulse frequency of 1-10 Hz. Run the laser for 10 minutes of pre-deposition to remove possible contaminant...

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Abstract

The invention relates to a high-quality zinc stannate single-crystal film and a preparation method thereof. The preparation method comprises the following steps: implementing a pulse laser depositionprocess, carrying out pressing molding and high-temperature sintering on Zn2SnO4 powder so as to obtain a ceramic target material, growing a zinc stannate film from a magnesium oxide (MgO) (100) crystal surface substrate by using pulse laser deposition equipment under a vacuum condition, and carrying out thermal treatment on the film in the air, thereby obtaining the zinc stannate single-crystal film. The film is an epitaxial material of a single-crystal structure, and the film has no twin structure inside.

Description

technical field [0001] The invention relates to a high-quality zinc stannate single crystal thin film and a preparation method thereof, belonging to the technical field of semiconductor photoelectric materials. Background technique [0002] In recent years, with the continuous development of transparent electronics and oxide optoelectronics, wide bandgap oxide semiconductor materials have become one of the frontiers of research. Common binary oxide materials mainly include indium oxide, zinc oxide, zinc oxide, titanium oxide, and gallium oxide, etc., and multi-element oxides mainly include indium gallium zinc oxide, magnesium zinc oxide, aluminum indium oxide, and zinc stannate. Wide bandgap oxide semiconductor materials have a very wide range of applications in flat-panel displays, solar cells, gas sensors, transparent thin-film transistors, ultraviolet light detectors, light-emitting diodes, and lasers. [0003] Zinc stannate (Zn 2 SnO 4 ) is an inverse spinel structure...

Claims

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Application Information

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IPC IPC(8): C30B29/22C30B23/02C30B33/02
CPCC30B23/025C30B23/066C30B29/22C30B33/02
Inventor 马瑾栾彩娜何林安
Owner SHANDONG UNIV
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