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Negative temperature coefficient thermosensitive film and preparation method thereof

A negative temperature coefficient, thermal film technology, applied in resistors with negative temperature coefficient, resistor manufacturing, ion implantation plating and other directions, can solve the development and application of negative temperature coefficient thermal film, low thermal constant, etc. problems, to achieve the effect of improving thermal performance, high thermal performance, and high negative temperature coefficient

Active Publication Date: 2019-08-09
中科传感(佛山)科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although existing researchers have successfully prepared negative temperature coefficient thermosensitive thin films by different methods, such as magnetron sputtering, molecular beam epitaxy, pump laser deposition or chemical solution deposition, but the common The thermosensitive constant of the negative temperature coefficient thermal film is lower than that of the bulk material and the sheet material, which is not conducive to the development and application of the negative temperature coefficient thermal film

Method used

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  • Negative temperature coefficient thermosensitive film and preparation method thereof
  • Negative temperature coefficient thermosensitive film and preparation method thereof
  • Negative temperature coefficient thermosensitive film and preparation method thereof

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Effect test

Embodiment 1

[0031] a. Substrate pretreatment: Firstly, immerse the purchased silicon substrate 4 in acetone, absolute ethanol, deionized water and absolute ethanol in order to perform ultrasonic cleaning for 4 times, each washing time is 5 minutes, and take out the silicon substrate 4 , using high-purity nitrogen to dry the surface of the silicon substrate 4 to obtain a pretreated silicon substrate 4;

[0032] b. Pretreatment of Mn-Co-Ni-Mg-Al alloy target: select Mn-Co-Ni-Mg according to the molar content ratio of Mn, Co, Ni, Mg and Al as 2.1:2.4:1.0:4:1 -Al alloy target material, grinding the surface of the Mn-Co-Ni-Mg-Al alloy target material, removing the surface oxide layer, and obtaining the pretreated Mn-Co-Ni-Mg-Al alloy target material;

[0033] c. Mn-Co-Ni-Mg-Al-based primary thin film preparation: using magnetron sputtering DC sputtering method, the atmosphere of magnetron sputtering DC sputtering is argon atmosphere; magnetron sputtering DC sputtering chamber The air pressure...

Embodiment 2

[0038] a. Substrate pretreatment: firstly, immerse the purchased silicon substrate 4 in acetone, absolute ethanol, deionized water and absolute ethanol in order to perform ultrasonic cleaning for 4 times, each washing time is 10 minutes, and take out the silicon substrate 4 , using high-purity nitrogen to dry the surface of the silicon substrate (4) to obtain a pretreated silicon substrate 4;

[0039] b. Pretreatment of Mn-Co-Ni-Mg-Al alloy target: select Mn-Co-Ni-Mg according to the molar content ratio of Mn, Co, Ni, Mg and Al as 2.1:2.4:1.0:4:1 -Al alloy target material, grinding the surface of the Mn-Co-Ni-Mg-Al alloy target material, removing the surface oxide layer, and obtaining the pretreated Mn-Co-Ni-Mg-Al alloy target material;

[0040] c. Mn-Co-Ni-Mg-Al-based primary thin film preparation: using magnetron sputtering DC sputtering method, the atmosphere of magnetron sputtering DC sputtering is argon atmosphere; magnetron sputtering DC sputtering chamber The air press...

Embodiment 3

[0045] a. Substrate pretreatment: First, immerse the purchased silicon substrate 4 in acetone, absolute ethanol, deionized water and absolute ethanol in order to perform ultrasonic cleaning for 4 times, each washing time is 8 minutes, and take out the silicon substrate 4 , using high-purity nitrogen to dry the surface of the silicon substrate 4 to obtain a pretreated silicon substrate 4;

[0046] b. Pretreatment of Mn-Co-Ni-Mg-Al alloy target: select Mn-Co-Ni-Mg according to the molar content ratio of Mn, Co, Ni, Mg and Al as 2.1:2.4:1.0:4:1 -Al alloy target material, grinding the surface of the Mn-Co-Ni-Mg-Al alloy target material, removing the surface oxide layer, and obtaining the pretreated Mn-Co-Ni-Mg-Al alloy target material;

[0047] c. Preparation of Mn-Co-Ni-Mg-Al-based primary thin film: adopt magnetron sputtering DC sputtering method, the atmosphere of magnetron sputtering DC sputtering is argon atmosphere; the chamber of magnetron sputtering DC sputtering The inte...

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Abstract

The invention relates to a negative temperature coefficient thermosensitive film and a preparation method thereof, wherein the film is prepared from an Au / Ti double-layer electrode, a Mn-Co-Ni-Mg-Al base film, insulating silicon dioxide and a silicon substrate; a plurality of oxygen vacancies are generated while grains of the Mn-Co-Ni-Mg-Al base film grow through a first annealing treatment in a protective atmosphere; the oxygen vacancies not only provide two additional electrons, but also cause the deviation of the stoichiometric ratio of the material, the change of the valence state of the metal cation and the distortion of the oxygen octahedron, and then the oxygen element deleted in the film is supplemented through the second annealing treatment in an oxygen-containing atmosphere, so that the stability of the film structure is ensured under the condition of the deviation of the stoichiometric ratio, the change of the valence state of the metal cation and the distortion of the oxygen octahedron, and the thermosensitive performance of the film is further improved. Experiments show that the thermosensitive constant of the negative temperature coefficient thermosensitive film can reach 7127-8518 k; and the negative temperature coefficient thermosensitive film has higher negative temperature coefficient and high thermosensitive performance, guarantees the using effect of a thermistor, and can be applied advantageously.

Description

technical field [0001] The invention belongs to the technical field of heat-sensitive materials, and in particular relates to a negative temperature coefficient heat-sensitive film and a preparation method thereof. Background technique [0002] Negative temperature coefficient (NTC) thermistor is a common temperature measurement and control element, which has the advantages of high temperature measurement accuracy, high sensitivity, good reliability, low cost, and long working life. Applications. With the continuous advancement of the electronic industry and information technology level, modern electronic information systems are developing towards chips, requiring thermistors to have a smaller size. [0003] At present, although there are a large number of sheet resistor products on the market, their volume is still too large to meet the requirements for small-scale resistors in the field of micro-nano device and integrated circuit manufacturing. Compared with bulk or shee...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35C23C14/18C23C14/58C23C14/04C23C14/30C23C14/34C23C14/16H01C7/04H01C17/12H01C17/28
CPCC23C14/042C23C14/16C23C14/165C23C14/185C23C14/30C23C14/34C23C14/35C23C14/5806H01C7/04H01C17/12H01C17/288
Inventor 孔雯雯张柯王倩常爱民姚金成王军华
Owner 中科传感(佛山)科技有限公司
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