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A kind of high-purity graphite crucible and high-quality silicon carbide single crystal preparation method

A technology of high-quality silicon carbide and high-purity graphite, applied in chemical instruments and methods, single crystal growth, single crystal growth, etc., can solve problems affecting the quality of silicon carbide single crystals, achieve large-scale application prospects, reduce production, reduce The effect of defect density

Active Publication Date: 2021-02-26
HEBEI SYNLIGHT CRYSTAL CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Carbon particle inclusions can become the starting point of micropipes and screw dislocations, forming more defects and seriously affecting the quality of silicon carbide single crystals

Method used

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  • A kind of high-purity graphite crucible and high-quality silicon carbide single crystal preparation method
  • A kind of high-purity graphite crucible and high-quality silicon carbide single crystal preparation method
  • A kind of high-purity graphite crucible and high-quality silicon carbide single crystal preparation method

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0035] Powder preparation:

[0036] Weigh 88.2g of silicon micropowder, 34.56g of carbon powder and 2.20g of polyimide into 500L of deionized water, then put them into a ball mill tank, grind at 60rpm for 2h, and spray dry the obtained slurry. The outlet temperature is 95°C, and the obtained dry powder is sintered once. The sintering atmosphere is argon atmosphere, the sintering temperature is 1900°C, and the sintering time is 2h. The powder is sintered in an oxidizing atmosphere for the purpose of removing excess adhesion. agent, and the product can be initially formed. The initial product to be obtained with 4.3 g of Y 2 o 3 , use a V-type mixer to mix for 3 hours, and then sinter for the second time in an atmosphere with a hydrogen:argon volume ratio of 1:7. The sintering temperature is 2300 ° C, and the sintering time is 3 hours. The sintered powder is post-treated process to form silicon carbide powder products.

[0037] Loading:

[0038] The high-purity graphite cru...

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Abstract

The invention discloses a preparation method of a high-purity graphite crucible and high-quality silicon carbide single crystals and belongs to the field of crystal growth. In the preparation method,through the combination of the high-purity graphite crucible, silicone carbide powder and growth process, the surface of a raw material can form a large silicon carbide crystal round cake to block thetransport of carbon particles at the bottom of the crucible, and carbon particle inclusions during the growth of the silicon carbide single crystals are reduced simply and efficiently.

Description

technical field [0001] The invention relates to the field of crystal growth, in particular to a method for preparing a high-purity graphite crucible and a high-quality silicon carbide single crystal. Background technique [0002] A common method for preparing large-diameter SiC crystals is the physical vapor transport method (PhysicalVaporTransport). During the crystal growth process, after the silicon carbide powder is heated at a high temperature, the sublimated gas phase components are transported under the action of the temperature gradient, and finally recrystallized on the surface of the lower temperature silicon carbide seed crystal. A typical silicon carbide growth system includes a growth chamber, induction heating system, water cooling system, graphite crucible and insulation materials. By adjusting the relative position of the crucible and the induction coil and the thickness of the insulation material, the temperature at the seed crystal on the upper part of the...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/36C30B23/02
CPCC30B23/02C30B29/36
Inventor 路亚娟刘新辉牛晓龙张福生杨昆
Owner HEBEI SYNLIGHT CRYSTAL CO LTD
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