Package structure of dual-size cooling IPM hybrid module and processing technology

A technology of double-sided heat dissipation and packaging structure, which is applied in the direction of electrical components, electric solid devices, circuits, etc., can solve the problems of high power density, local heating, etc., and achieve the effects of improving service life, reducing the maximum temperature, and reducing bonding wires

Inactive Publication Date: 2019-06-21
HUANGSHAN UNIV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, the IPM is small in size, compact in structure, and contains multiple power devices inside, resulting in a high power density and serious local heating. The failure problem caused by overheating has become one of the limitations of the development of IPM. There is an urgent need for high power density IPM Conduct in-depth research and optimization on the module package design, and propose an efficient heat dissipation package solution

Method used

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  • Package structure of dual-size cooling IPM hybrid module and processing technology
  • Package structure of dual-size cooling IPM hybrid module and processing technology
  • Package structure of dual-size cooling IPM hybrid module and processing technology

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Embodiment Construction

[0058] The present invention will be further described below in conjunction with drawings and embodiments.

[0059] The present invention proposes a packaging structure of a double-sided heat dissipation IPM hybrid module, which generally includes a silicon-based IGBT chip, a SiC-based SBD chip (silicon carbide-based Schottky barrier diode chip), a silicon-based driver chip, and a printed circuit board (Printed Circuit Board). Board, PCB), DBC liner (that is, copper-clad ceramic substrate), nano-silver interconnection layer, buffer layer, solder layer, bonding wire, plastic package, packaging resin, thermal grease and heat sink. Wherein adopt upper and lower double radiator 59,60 to carry out double-sided cooling, see figure 1 . figure 1 The emitter of the first silicon-based IGBT chip 11 and the anode of the first SiC-based SBD chip 16 pass through the first nano-silver interconnect layer 15 and the third nano-silver interconnect layer 20, and are inverted mounted on the fir...

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Abstract

The invention relates to a package structure of a dual-size cooling IPM hybrid module and a processing technology. The structure comprises a silicon-based IGBT chip, a silicon carbide-based Schottky barrier diode chip, a silicon-based driving chip, a printed circuit board, a copper-coated ceramic substrate, a nanometer silver interconnection layer, a buffer layer, a welding material layer, a bonding lead, a plastic package shell, package resin, heat conduction silicon grease and a heat sink. With the adoption of an upper substrate and a lower substrate and a package mode of flip chip, an emitter of the IGBT chip and a positive electrode of the Schottky barrier diode chip are connected to a lead frame by the copper-coated ceramic substrate, the bonding lead is reduced, so that dual-side cooling of the IPM hybrid module is achieved, and the module reliability is improved; and the welding material layer between the chip and the substrate is substituted by the nanometer silver interconnection layer, the high-temperature characteristic of a silicon carbide material is favorably developed, meanwhile, the longitudinal conduction capability of heat from the chip to the substrate is improved, so that the highest temperature of the IPM hybrid module is reduced, and the service lifetime of the module is prolonged.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to a packaging structure and a processing technology of a double-sided cooling IPM hybrid module. Background technique [0002] With the rapid development of power electronics technology, computer technology and VLSI technology, the frequency conversion speed control system tends to develop in the direction of digitalization and high integration. During the development process, the control mode has also developed from the initial v / f control to vector control and direct torque control. Among them, the dual pulse width modulation (Pulse Width Modulation, PWM) conversion speed regulation technology can realize the four-quadrant operation of the motor, the energy conversion efficiency is high, and the energy can flow in both directions. , eliminating harmonic pollution and other characteristics has become a research hotspot. [0003] The rectification and inverter ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L25/16H01L23/495H01L23/31H01L21/48H01L21/60
CPCH01L2224/33181
Inventor 鲍婕许媛陈珍海刘琦赵年顺戴立新戴薇
Owner HUANGSHAN UNIV
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