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High-purity low-aluminum type spherical beta silicon nitride powder as well as manufacturing method and application thereof

A silicon nitride powder, spherical-like technology, applied in chemical instruments and methods, nitrogen compounds, inorganic chemistry, etc., can solve the problems of reduced reliability, chips restricting the development of electronic products, and the use temperature cannot be higher than 80 °C, and achieves The effect of low impurity content

Pending Publication Date: 2019-05-17
QINGDAO CUP NEW MATERIALS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The data pointed out that for most electronic devices, the operating temperature cannot be higher than 80°C; above this temperature, the reliability will be reduced by half for every 10°C increase in temperature; and chip failure caused by system overheating accounts for the majority of chip failure. More than 50% of the reasons, it can be seen that the chip heat dissipation problem has become a bottleneck problem restricting the further development of electronic products

Method used

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  • High-purity low-aluminum type spherical beta silicon nitride powder as well as manufacturing method and application thereof
  • High-purity low-aluminum type spherical beta silicon nitride powder as well as manufacturing method and application thereof
  • High-purity low-aluminum type spherical beta silicon nitride powder as well as manufacturing method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0094] Embodiment 1 The improved combustion synthesis method prepares the method for the beta silicon nitride of high sphericity, low Al

[0095] The silicon powder is pickled with hydrofluoric acid and nitric acid to obtain low-aluminum high-purity silicon powder (2 Content>99.999vol%)N 2 Under the atmosphere, ignite at one end to initiate a self-propagating reaction, and the reaction is completed when the sample is extended from one end to the other end, and the β-silicon nitride powder is obtained. The XRD of the powder is as follows: figure 1 shown (by figure 1 It can be seen that the silicon nitride obtained in Example 1 is almost all β-phase); the resulting product is ball-milled in a non-Al lining such as nylon or polyurethane, and the balls are made of silicon nitride balls, milled for 4 hours to obtain a particle size of 2.15 μm , β-silicon nitride powder with a sphericity of 0.89, the powder morphology and particle size are as follows figure 2 and 3 As shown; the...

Embodiment 2

[0096] Example 2 The method for preparing high sphericity and low Al beta silicon nitride by improved carbothermal reduction method

[0097] Using low-aluminum carbon powder (<500ppm) and low-aluminum amorphous silicon oxide (<500ppm) powder as raw materials with a mass ratio of 1:2, add low-aluminum calcium carbonate additive (<500ppm), and the addition ratio accounts for 10mol of the total mass of raw materials %. The above raw materials were mixed with water, prepared into a slurry with a solid content of 30vol%, ball milled for 24 hours, dried and ground. The above raw materials were placed in a gas pressure sintering furnace for carbothermal reduction reaction at a temperature of 1800° C., a nitrogen pressure of 4 MPa, and a reaction time of 2 h. The obtained product was placed in a muffle furnace, kept at 650°C for 5 hours to remove excess carbon, and a high-purity β-silicon nitride powder with a sphericity of 0.93, a particle size of 9.02 μm, and an aluminum content of...

Embodiment 3

[0098] Example 3 Improved granulation and sintering method to prepare high sphericity, low Al β silicon nitride method

[0099] Using low-Al α-silicon nitride (<500ppm) powder as raw material, add 5wt% of low-alumina yttrium oxide (<500ppm) and 5wt% of low-alumina alumina (<500ppm) additives, the addition ratio accounts for the total mass of raw materials 1wt% dispersant and 2wt% binder PVB were formulated into a slurry with a solid content of 30vol%, and ball milled for 24 hours to mix evenly. The ball-milled slurry is subjected to spray granulation to prepare spherical α-silicon nitride granulated powder. The various parameters of the spray granulation process used are: the hot air inlet temperature is 150°C, the exhaust air temperature is 50°C, and the rotational speed of the centrifugal disk of the atomizer is 6000rpm. The granulated powder was placed in a crucible, and sintered in a gas pressure sintering furnace at a temperature of 1800° C., a nitrogen pressure of 4 MPa...

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Abstract

The invention provides high-purity low-aluminum type spherical beta silicon nitride powder. The sphericity degree of the silicon nitride powder is between 0.5 and 0.99; Al impurity content is less than 500 ppm; granularity range is between 0.5 mum and 50 mum; the beta silicon nitride powder can be used as a filling material of an electronic encapsulation material, and is particularly applicable tohigh-heat-conductivity ultra-high-frequency and extreme-high-frequency electronic encapsulation materials, such as the field of burgeoning 5G communication.

Description

technical field [0001] The invention relates to a high-purity and low-aluminum spherical β-silicon nitride powder, which can be used as a filling material for electronic packaging materials, especially for high thermal conductivity ultra-high frequency and extremely high frequency electronic packaging materials, such as the emerging 5G communication field, It belongs to the field of electronic packaging. Background technique [0002] With the rapid progress of modern microelectronics technology, electronic products and their devices are gradually developing in the direction of miniaturization, high integration and high power. Continued to increase. The data pointed out that for most electronic devices, the operating temperature cannot be higher than 80°C; above this temperature, the reliability will be reduced by half for every 10°C increase in temperature; and chip failure caused by system overheating accounts for the majority of chip failure. More than 50% of the reasons...

Claims

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Application Information

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IPC IPC(8): C01B21/068C08L63/00C08L83/04C08K9/06C08K7/18C09K5/14
CPCC08L63/00C08L83/04C09K5/14C01B21/0682C01P2004/61C01P2004/03C01P2002/72C08K3/34C08K3/36C08K2201/005C08K2201/019C08G77/04C08K9/02C08K2003/385
Inventor 邹艺峰贾再辉崔巍孙思源成会明
Owner QINGDAO CUP NEW MATERIALS CO LTD
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