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TSV rapid filling method and device

A filling method and fast technology, applied in the direction of electrolysis components, electrolysis processes, circuits, etc., can solve the problems of TSV voids or slits, limited improvement capacity, filling defects, etc., to promote nucleation growth, improve production efficiency, and accelerate deposition. effect of speed

Active Publication Date: 2019-04-16
CENT SOUTH UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In order to solve this problem, most of the current methods are considered to increase the electroplating deposition rate by increasing the current density, but this method is easy to cause filling defects.
That is, high current density conditions can easily lead to the early clamping of the TSV orifice, resulting in the formation of voids or slits inside the TSV.
In addition, ultrasonic stirring can also be used to increase the material transmission rate in the plating solution, thereby increasing the electroplating deposition rate, but this method has limited improvement capabilities and needs to be used together with other methods

Method used

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Examples

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Embodiment 1

[0029] The TSV rapid filling device provided by the present invention, such as figure 2 As shown, including electroplating anode, electroplating cathode, electroplating power supply, electroplating solution and ultrasonic horn. The upper end of the electroplating anode is connected to the positive pole of the electroplating power supply through a wire, and the lower end is fixed in the electroplating solution by an electrode clamp; the upper end of the electroplating cathode is connected to the negative pole of the electroplating power supply through a wire, and the lower end is fixed in the electroplating solution by an electrode clamp; the ultrasonic horn and the electroplating Liquid contact for applying ultrasonic excitation. Wherein, the electroplating anode is a copper anode; the electroplating solution is a copper-containing electroplating solution, including a copper sulfate electroplating solution or a copper sulfonate electroplating solution.

Embodiment 2

[0031] The TSV fast filling method provided in this embodiment includes the following steps:

[0032] The first step: preparing a suspension containing silver nanoparticles;

[0033] Weigh 0.5g of nano-silver powder and pour it into a beaker, wherein the average particle size of the nano-silver is 20 nanometers; then measure 50ml of ethanol and pour it into the beaker, and stir fully to fully disperse and suspend the nano-silver particles in the ethanol solvent. A suspension of 10 g / L silver nanoparticles was obtained.

[0034] The second step: put the silicon chip and make the nano-silver particles precipitate into the TSV blind hole;

[0035] Cut out a silicon wafer containing TSV blind holes, wherein the size of the silicon wafer is 1cm in length and 2cm in width, and the size of the TSV blind hole is 20 μm in diameter and 65 μm in depth; the silicon wafer is washed with deionized water and put into the nano-silver suspension obtained in step 1 In the solution, keep the o...

Embodiment 3

[0044] The TSV fast filling method provided in this embodiment includes the following steps:

[0045] The first step: preparing a suspension containing nickel nanoparticles;

[0046] Weigh 0.4g of nano-nickel powder and pour it into a beaker, wherein the average particle size of nano-nickel is 20 nanometers; then measure 50ml of ethanol and pour it into the beaker, and stir fully to fully disperse and suspend the nano-nickel particles in the ethanol solvent. A suspension of 8 g / L nickel nanoparticles was obtained.

[0047] The second step: put the silicon wafer and precipitate the nano-nickel particles into the TSV blind hole;

[0048] Cut out a silicon wafer containing TSV blind holes, where the size of the silicon wafer is 1 cm long and 2 cm wide, and the size of the TSV blind hole is 20 μm in diameter and 65 μm in depth; the silicon wafer is washed with deionized water and put into the nano-nickel suspension obtained in step 1 Keep the opening of the TSV hole facing up; p...

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Abstract

The invention provides a TSV rapid filling method and device. The TSV rapid filling method comprises the following steps of conducting pretreatment, wherein a silicon slice comprising a TSV blind holeis placed in a metal nanometer particle suspension liquid for 20 hours or above with the opening being upward; taking out the silicon slice and heating the silicon slice at the temperature of 200-500DEG C for 15-60 min; conducting copper electroplating, wherein copper electroplating is conducted on the heated silicon slice until the TSV blind hold is completely filled. The TSV rapid filling device comprises an electroplating anode, an electroplating cathode, an electroplating power source, an electroplating liquid and an ultrasonic amplitude transformer. After pretreatment, metal nanoparticles are deposited in the TSV hole in advance after pretreatment, then the TSV rapid filing device is utilized to conduct copper electroplating, the deposition speed of the copper is accelerated, and therefore the production efficiency is improved.

Description

technical field [0001] The invention relates to the technical field of microelectronic packaging, in particular to a TSV rapid filling method and device. Background technique [0002] With the continuous development of integrated circuit technology, chips are further developed towards integration and miniaturization. Three-dimensional integrated packaging with Through Silicon Via (TSV) interconnection as the core has become an inevitable trend in the packaging industry in the future. TSV technology is a method of vertically interconnecting stacked chips through the silicon substrate itself to form a high-density three-dimensional integrated chip. This technology has many advantages such as "high density, multi-function, and small size". [0003] TSV usually first etches blind holes on silicon wafers by BOSH etching technology, and then uses electroplating copper to fill the TSV blind holes to complete the preparation of three-dimensional interconnection channels. The pore ...

Claims

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Application Information

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IPC IPC(8): C25D5/00C25D7/12C25D3/38C25D17/00
CPCC25D3/38C25D5/00C25D7/12C25D17/00
Inventor 王彦王福亮陈卓何虎李军辉
Owner CENT SOUTH UNIV
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