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T-gate N-plane GaN/AlGaN fin high electron mobility transistor

A high electron mobility, transistor technology, applied in circuits, electrical components, semiconductor devices, etc., can solve the problems of weak short channel effect suppression ability, poor two-dimensional electron gas confinement, high ohmic contact resistance, etc., to achieve Suppression of short channel effect, improvement of microwave performance, and small ohmic contact resistance

Inactive Publication Date: 2019-04-02
南京誉凯电子科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The device uses a Ga-face GaN-based structure. Compared with N-face GaN-based devices, Ga-face GaN-based devices have higher ohmic contact resistance, poor two-dimensional electron gas confinement, and short-channel effects. Inhibition is also weak

Method used

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  • T-gate N-plane GaN/AlGaN fin high electron mobility transistor
  • T-gate N-plane GaN/AlGaN fin high electron mobility transistor
  • T-gate N-plane GaN/AlGaN fin high electron mobility transistor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] Example 1: Fabricate a T-gate N-plane GaN / AlGaN fin-type high electron mobility transistor with a fin-type GaN / AlGaN heterojunction width of 2 μm, a T-type gate neck height of 50 nm, and a gate cap height of 100 nm.

[0029] Step 1: growing a buffer layer.

[0030] At a temperature of 680°C and a pressure of 5×10 -3 Under the process condition of Pa, the molecular beam epitaxy MBE equipment is used in Figure 4 (a) An N-face GaN buffer layer with a thickness of 1.5 μm is grown on the sapphire substrate shown in (a).

[0031] Step 2: growing a barrier layer.

[0032] At a temperature of 680°C and a pressure of 5×10 -3 Under the process conditions of Pa, a layer of AlGaN with a thickness of 20nm was first grown on the GaN layer by using molecular beam epitaxy MBE equipment, and the Al composition gradually changed from 5% to 30% from bottom to top; The composition is 30% AlGaN layer.

[0033] Step 3: growing a channel layer.

[0034] At a temperature of 680°C and a ...

Embodiment 2

[0047] Example 2: Fabricate a T-gate N-plane GaN / AlGaN fin-type high electron mobility transistor with a fin-type GaN / AlGaN heterojunction width of 3 μm, a T-type gate neck height of 70 nm, and a gate cap height of 200 nm.

[0048] Step 1: Growth buffer layer.

[0049] On the SiC substrate, a layer of N-face GaN buffer layer with a thickness of 2 μm is grown by molecular beam epitaxy MBE. The growth process conditions are:

[0050] The growth temperature is 680°C and the pressure is 5×10 -3 Pa.

[0051] Step 2: Growing a barrier layer.

[0052] A layer of AlGaN with a thickness of 20nm was grown on the GaN layer by MBE, and the Al composition gradually changed from 5% to 30% from bottom to top; another layer of AlGaN with a thickness of 8nm and an Al composition of 30% was grown layer, the process conditions for its growth are:

[0053] The growth temperature is 680°C and the pressure is 5×10 -3 Pa.

[0054] Step 3: growing a channel layer.

[0055] On the AlGaN layer, ...

Embodiment 3

[0067] Example 3: Fabricate a T-gate N-plane GaN / AlGaN fin-type high electron mobility transistor with a fin-type GaN / AlGaN heterojunction width of 2.5 μm, a T-type gate neck height of 90 nm, and a gate cap height of 250 nm.

[0068] Step A: growing a buffer layer on the substrate.

[0069] Using molecular beam epitaxy MBE equipment at a temperature of 680°C and a pressure of 5×10 -3 Under the process condition of Pa, an N-face GaN buffer layer with a thickness of 2.5 μm is grown on the SiC substrate.

[0070] Step B: growing a barrier layer on the buffer layer.

[0071] Using molecular beam epitaxy MBE equipment at a temperature of 680°C and a pressure of 5×10 -3 Under the process conditions of Pa, a layer of AlGaN with a thickness of 20nm is first grown on the GaN buffer layer, and the Al composition is gradually changed from 5% to 30% from bottom to top, and the thickness of another layer is 5nm, and the Al composition is 30%. AlGaN layer.

[0072] Step C: growing a cha...

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Abstract

The invention discloses a T-gate N-plane GaN / AlGaN fin high electron mobility transistor. The objective of the invention is to mainly solve the problems that a current microwave power device is smallin the maximum oscillation frequency, large in ohmic contact resistance and serious in the short channel effect. The T-gate N-plane GaN / AlGaN fin high electron mobility transistor comprises from bottom to top: a substrate (1), a GaN buffer layer (2), an AlGaN barrier layer (3), a GaN channel layer (4), a gate dielectric layer (5), a passivation layer (6), a source, a drain, and a gate. The bufferlayer and the channel layer are made of N-plane GaN materials; the GaN channel layer and the AlGaN barrier layer form a GaN / AlGaN heterojunction; the gate employs a T-shaped gate and coats the two sides and the top portion of the GaN / AlGaN heterojunction to form a three-dimensional gate structure. The T-gate N-plane GaN / AlGaN fin high electron mobility transistor is good in gate control capacity,small in the ohmic contact resistance and high in maximum oscillation frequency, and can be used as a mini-type microwave power device.

Description

technical field [0001] The invention belongs to the technical field of microelectronic devices, in particular to a T-gate N-plane GaN / AlGaN fin-type high electron mobility transistor Fin-HEMT, which can be used for microwave power integrated circuits. Background technique [0002] As a third-generation semiconductor material, GaN material is considered to be an excellent material for making microwave power devices and high-speed devices due to its advantages such as large band gap, high concentration of two-dimensional electron gas 2DEG and high electron saturation velocity. Especially the AlGaN / GaN heterojunction high electron mobility transistor HEMT is widely used in microwave power circuits. [0003] With the shrinking of transistor size, the gate length is getting shorter and shorter, and the short channel effect of traditional high electron mobility transistor HEMT becomes more and more obvious. Ordinary I-type gates have large parasitic capacitance and parasitic resi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/06H01L29/423H01L29/78H01L21/336
CPCH01L29/785H01L29/0688H01L29/42316H01L29/66795
Inventor 刘梅
Owner 南京誉凯电子科技有限公司
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