Panchromatic Micro-LED device based on inorganic/organic semiconductor hybrid structure and preparation method thereof
A technology of organic semiconductor and hybrid structure, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electric solid-state devices, etc., and can solve the problems that there is no full-color Micro-LED.
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment 1
[0071] Example 1 Red-green-blue Micro-LED device based on Group III nitride / organic semiconductor hybrid structure
Embodiment approach
[0072] In this implementation case, blue LEDs and red and green organic LEDs are used to form a red-green-blue micron LED array device based on a III-nitride / organic semiconductor hybrid structure. Select In with p-n structure x Ga 1-x N / GaN quantum well blue LED epitaxial wafers, such as figure 1As shown, it includes a sapphire substrate 1; a GaN buffer layer 2 grown on the sapphire substrate; an N-type GaN layer 3 grown on the buffer layer; an In grown on the N-type GaN layer x Ga 1-x N / gallium nitride quantum well active layer 4; P-type gallium nitride layer 5 grown on the quantum well active layer; its emission wavelength is 450-470nm; red light organic light emitting diode adopts host material doped with red fluorescent or Made of phosphorescent small molecule materials, its luminous wavelength is 630-660nm; green organic light-emitting diodes are made of host materials doped with green fluorescent or phosphorescent small molecule materials, and their luminous wavelen...
Embodiment 2
[0089] The difference between this example and Example 1 lies in the N-type electrode of the inorganic LED and the organic light-emitting diode structure, and the structure of the inorganic LED still adopts Figure 1 to Figure 7 structure, so the following will focus on the N-type electrodes of inorganic LEDs and the structure of organic light-emitting diodes in detail:
[0090] (1) if Figure 17 As shown, the plasma-enhanced chemical vapor deposition (PECVD) technique was used in Figure 7 A layer of SiO was deposited on the sample 2 or SiN x The dielectric layer film serves as the mask layer 6 . PECVD grown SiO 2 The process used for the dielectric layer is: silane (SiH 4 ) and nitrous oxide (N 2 O) mixed gas source, by chemical reaction SiH x +O→SiO 2 (+H 2 ) Deposit SiO on the P-type GaN layer heated to 350°C 2 The film layer has a thickness of 150-250nm. PECVD-grown SiN x The thin film process is as follows: silane (SiH 4 ) and nitrogen (N 2 ) mixed gas sour...
PUM
Property | Measurement | Unit |
---|---|---|
Thickness | aaaaa | aaaaa |
Luminous wavelength | aaaaa | aaaaa |
Thickness | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com