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Group III/nitride epitaxial structure and its active device and its integrated method

A gallium nitride epitaxy and gallium nitride technology, which is used in semiconductor/solid-state device manufacturing, electrical components, semiconductor devices, etc., can solve the problems of difficult to control the etching depth and uneven thickness of the epitaxial layer of the epitaxial chip.

Active Publication Date: 2022-05-10
黄知澍
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] The most common process method is to grow an additional layer of P-type GaN (P -GaN) layer, and then etch away the P-type gallium nitride (P-GaN) outside the gate (Gate) area by dry etching, and try to keep the next layer of aluminum gallium nitride (AlGaN) epitaxy The integrity of the thickness of the crystal layer, because if the next layer of aluminum gallium nitride (AlGaN) epitaxial layer is etched too much, it will cause gallium cleavage surface (Ga-Face) P-type gallium nitride gate (P-GaN The two-dimensional electron gas (2-DEG) of the AlGaN / GaN interface of the enhanced high-speed electron mobility transistor (E-Mode HEMT structure) structure of Gate) cannot be formed
Therefore, the method of dry etching is actually very difficult because: 1. The etching depth is difficult to control, 2. The thickness of each epitaxial layer on the epitaxial chip will still be uneven; in addition, this epitaxial structure is different from the general depletion type. (D-Mode) AlGaN / GaN High Speed ​​Electron Mobility Transistor (AlGaN / GaN HEMT) epitaxial structure has the problem of current collapse effect (Current Collapse) that must be solved, for example: buffer layer defect (Buffer Traps) and surface defects (Surface Traps)

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  • Group III/nitride epitaxial structure and its active device and its integrated method
  • Group III/nitride epitaxial structure and its active device and its integrated method
  • Group III/nitride epitaxial structure and its active device and its integrated method

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Embodiment 2

[0131] Embodiment two: as Figure 5A , 5B , for the fluorine ion implantation-enhanced aluminum gallium nitride / gallium nitride (AlGaN / GaN) high-speed electron mobility transistor of the present invention is connected in series with depletion type and does not have gate insulating dielectric layer gallium aluminum nitride / gallium nitride (AlGaN AlGaN / GaN) high-speed electron mobility transistors are the first structure diagram and the second structure diagram of the fluorine ion implanted mixed enhanced aluminum gallium nitride / gallium nitride (AlGaN / GaN) high-speed electron mobility transistor. Such as Figure 5A , 5B As shown, fluorine ions (F-) are implanted in the aluminum gallium nitride barrier layer (i-AlGaN barrier layer) 16 under the first gate electrode metal 60 to form an enhanced aluminum gallium nitride / gallium nitride (AlGaN / GaN) high-speed electron mobility transistor connected in series with a depletion-type aluminum gallium nitride / gallium nitride (AlGaN / G...

Embodiment 4

[0155] The manufacturing process of the fourth embodiment is the same as that of the previous embodiments in that after the fluorine ion implantation process is performed on the aluminum gallium nitride / gallium nitride (AlGaN / GaN) epitaxial structure designed in the present invention, the fourth embodiment is formed in the left region L1. A source ohmic contact electrode 30 and a first drain ohmic contact electrode 31 synchronously form a cathode ohmic contact electrode (cathode electrode metal) 34 of a Schottky barrier diode (SBD) in the right region R1. An anode field plate insulating dielectric layer 92 is then formed on the right region R1 , and the first gate insulating dielectric layer 50 is also formed in the left region L1 at this time.

[0156] Next, as previously mentioned, form the first gate electrode metal 60 and each connection metal, for example: the first gate of the fluorine ion implanted hybrid aluminum gallium nitride / gallium nitride (AlGaN / GaN) Schottky barr...

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Abstract

The invention relates to a group III / nitride epitaxial structure, an active element and a manufacturing method thereof. It includes a substrate; a gallium nitride high resistance layer on the substrate; a gallium aluminum nitride buffer layer on the gallium nitride high resistance layer; a gallium nitride channel layer on the gallium aluminum nitride buffer layer an aluminum gallium nitride barrier layer on the gallium nitride channel layer; a fluorine ion structure in the aluminum gallium nitride barrier layer; and a first gate insulating dielectric layer on the fluorine ion structure. The gallium aluminum nitride buffer layer is to block the defect electrons of the buffer layer from entering the channel layer and thus reduce the current collapse effect; the gallium nitride enhanced aluminum gallium nitride / gallium nitride high-speed electron mobility transistor, hybrid Schottky barrier diodes or hybrid device-enhanced AlGaN / GaN high-speed electron mobility transistors.

Description

technical field [0001] The present invention relates to an epitaxial structure, in particular to an epitaxial structure grown in a III-group / nitride semiconductor series, the advantage of which is that the aluminum gallium nitride barrier layer (i-AlGaN barrier layer) has The growth environment of the aluminum buffer layer (i-AlGaN buffer layer) will have fewer defects, thereby reducing the surface traps of the aluminum gallium nitride barrier layer (i-AlGaN barrier layer). As for the i-AlGaN buffer layer (i-AlGaN buffer layer), which can just block the buffer trap electrons from entering the channel layer (channel layer), thereby reducing the current collapse effect (Current Collapse), the new active device and its product Integrated method of production. Background technique [0002] In the past known technology, the most common way to achieve enhanced high-speed electron mobility transistors with epitaxial structures is 1. Gallium cleavage plane (Ga-Face) P-type gallium...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/778H01L29/205H01L27/085H01L27/06H01L21/335H01L21/265H01L21/8232H01L21/822
CPCH01L29/205H01L29/66462H01L21/2654H01L29/7787H01L29/2003H01L29/207H01L29/66212
Inventor 黄知澍
Owner 黄知澍
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