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Solar cell and its manufacturing process

A solar cell and manufacturing process technology, applied in the field of solar cells, can solve problems affecting the improvement of photoelectric conversion efficiency and the like

Active Publication Date: 2021-06-04
GCL SYST INTEGRATION TECH +2
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

But no matter how good the passivation is, the existence of recombination centers is inevitable, which greatly affects the degree of improvement in photoelectric conversion efficiency.

Method used

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  • Solar cell and its manufacturing process

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Experimental program
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Effect test

Embodiment 1

[0043] Prepare a solar cell with a double-sided symmetrical emitter junction structure:

[0044] (1) Alkali texturing of silicon wafers: cleaning of N-type monocrystalline silicon wafers to remove the damaged layer on the surface of the silicon wafers, followed by alkali texturing, the lye used is according to KOH: additive: H2O=8:1.5 : The KOH solution prepared in the ratio of 160, the concentration of the KOH solution is 5%, the temperature is 80° C., and a pyramid structure suede is formed on both sides of the silicon wafer;

[0045] (2) Form symmetrical p+ regions on both sides of the battery: First, use boron tribromide as the boron source in the boron diffusion furnace to perform single-sided boron diffusion. Wax to prepare mask, and then pass through HF / HNO in single-side etching equipment 3 The solution etches away the boron in the area not covered by the mask, thereby forming a p+ region in the covered area. The p+ region is located on the left and right sides of bot...

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Abstract

The invention relates to a solar cell and a manufacturing process thereof. The silicon wafer of the solar cell is an N-type single crystal silicon wafer or a P-type single crystal silicon wafer, the surface of the silicon wafer has a pyramid structure suede, and the front and back of the silicon wafer have electrodes and emitter junctions. The emitter junction is formed by the p+ and n+ regions on the surface of the silicon wafer. Simultaneously, the invention also discloses the manufacturing process of the above-mentioned solar cell. The above-mentioned solar cell has a PN junction on both its front and back sides, so the photogenerated carriers generated are quickly collected under the action of the built-in electric field without passing through the entire silicon wafer substrate, which can effectively improve the photoelectric conversion. Efficiency, while avoiding the thermal attenuation phenomenon of P-type single-polycrystalline PERC cells and Al‑BSF cells. Moreover, due to the characteristics of double-sided emitter junctions, in the actual power generation process, there will be two peak outputs in a day, which has higher power generation capacity and significantly reduces power generation costs.

Description

technical field [0001] The invention relates to the technical field of solar cells, in particular to a solar cell with double-sided emitter junctions and a manufacturing process thereof. Background technique [0002] As a new energy source, solar energy has the advantages of being inexhaustible, clean and environmentally friendly compared with traditional fossil fuels. Solar power generation devices, also known as solar cells or photovoltaic cells, can directly convert solar energy into electrical energy. The principle of power generation is based on the photovoltaic effect of semiconductor PN junctions. When light reaches the surface of the cell, it is absorbed to generate electron-hole pairs. That is, the photogenerated carriers, under the action of the built-in electric field, the photogenerated carriers must pass through the entire silicon wafer substrate to be collected. During this crossing process, photogenerated carriers will inevitably be captured by recombination ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0236H01L31/0352H01L31/068H01L31/18
CPCH01L31/02363H01L31/03529H01L31/0684H01L31/1804Y02E10/547Y02P70/50
Inventor 崔艳峰袁声召张淳
Owner GCL SYST INTEGRATION TECH
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