rc-igbt device and its preparation method
A technology of devices and drift regions, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as hazards, reliability and performance of devices in negative resistance regions, and achieve the goal of increasing potential difference and suppressing the Snapback effect Effect
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[0046]According to another aspect of the present invention, there is also provided a method for preparing an RC-IGBT device, comprising the following steps: forming a first substrate having a drift region 7 and a field stop region 8, the field stop region 8 being located on one side of the drift region 7 Both the drift region 7 and the field stop region 8 have the first conductivity type; the first collector region 10 and the second collector region 9 are formed on the side of the first substrate close to the field stop region 8, and the first collector region 10 It has a first end, and the first end runs through the field stop region 8 to isolate the field stop region 8 into a first stop region and a second stop region, and the part of the first collector region 10 other than the first end Set in contact with the first cut-off region, the second collector region 9 is arranged in contact with the second cut-off region, the second collector region 9 has the first conductivity ty...
Embodiment 1
[0056] The RC-IGBT device provided by this embodiment is as image 3 As shown, its cells include gate 1, source 2, gate oxide layer 3, silicon carbide P + The contact area 4, silicon carbide N + The source region 5, silicon carbide P + The base region 6, silicon carbide N + The drift region 7, silicon carbide N + The field stop region 8, silicon carbide N + The second collector region 9, silicon carbide P + The first collector region 10 and the collector electrode 11 , the first collector region 10 has a first end portion, and the first end portion penetrates the field stop region 8 .
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