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Semiconductor sensor and quantitative determination method for sarin gas or sarin simulation agent gas

A quantitative detection method and sensor technology, which are applied in instruments, measuring devices, scientific instruments, etc., can solve the problems of being easily interfered by pesticides and insecticides, being troubled by sensitivity and selectivity, incapable of sarin gas and its sarin simulants. Gas quantitative detection and other problems, to achieve the effect of preventing or treating hazards, long service life, and good stability

Active Publication Date: 2018-06-15
中国人民解放军陆军防化学院
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Traditional chemical agent detection methods are often troubled by sensitivity and selectivity when detecting sarin gas and its sarin simulants, or are easily interfered by pesticides and insecticides, but cannot detect sarin gas and its sarin simulants. Quantitative detection of gases

Method used

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  • Semiconductor sensor and quantitative determination method for sarin gas or sarin simulation agent gas
  • Semiconductor sensor and quantitative determination method for sarin gas or sarin simulation agent gas
  • Semiconductor sensor and quantitative determination method for sarin gas or sarin simulation agent gas

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1I

[0081] Example 1In 2 o 3 hydrothermal synthesis process

[0082] Prepare raw materials: InCl 3 4H 2 O, absolute ethanol, formamide (CH 3 NO), sodium dodecylbenzenesulfonate (SDBS);

[0083] Take 0.8g of InCl 3 4H 2 O was dissolved in 15 mL of absolute ethanol, and then 0.5 mL of formamide was added to obtain a clear solution after dissolving;

[0084] Add 1.2g of sodium dodecylbenzenesulfonate (SDBS) and stir vigorously to obtain a uniform turbid slurry;

[0085] Pour 15mL of the slurry into a 20mL stainless steel reaction kettle lined with polytetrafluoroethylene, close it and heat it at 140°C for 8h, cool naturally after the reaction is over, pour off the supernatant, wash with deionized water and centrifuge to obtain The precursor precipitates InOOH;

[0086] Dry InOOH at 80°C, then take the sample in a magnetic boat and sinter in a tube furnace at atmospheric pressure at 300°C for 0.5h, and finally collect InOOH 2 o 3 product.

[0087] In other embodiments, an ...

Embodiment 2

[0088] Embodiment 2 sensitive performance test

[0089] see Figure 4 , the experiment adopts DO7-12A / ZM mass flow controller (Mass Flow Controller, MFC for short) to control the flow of the system;

[0090] Introduce the air and dry the incoming air to prevent the moisture in the air from reacting with the sarin, decompose the sarin, and prevent the subsequent air from freezing in the cold trap when the sarin poison is purged through the cold trap. cause airway blockage;

[0091] Pass the dried air into the mass flow controller and divide it into three paths: the air flow rate in channel 1 is 700ml / min, which is used as the resistance background value measured before sarin gas detection; the air flow rate in channel 2 is 50ml / min- 200ml / min, the air in channel 2 is used to pass into the sarin container built in the cold trap to blow out the sarin gas; the air flow rate in channel 3 is 500ml / min-650ml / min as the diluent gas and the channel 2. The sarin gas brought out is fu...

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Abstract

The invention provides a semiconductor sensor, which comprises a sensitive material layer that includes indium oxide. The semiconductor sensor is used for quantitative determination of a sarin gas ora sarin simulation agent gas. The invention further provides a quantitative determination method for a sarin gas or a sarin simulation agent gas. The method comprises providing any kind of a semiconductor sensor; exposing the sensitive material layer of the semiconductor sensor to an atmosphere of a to-be-detected sarin gas or sarin simulation agent gas, heating the semiconductor sensor, and obtaining a first response value of the semiconductor sensor in the to-be-detected sarin gas or sarin simulation agent gas; and calculating the concentration of the to-be-detected sarin gas or sarin simulation agent gas according to the obtained first response value.

Description

technical field [0001] The invention relates to the field of chemical poison detection, in particular to a semiconductor sensor and a quantitative detection method for sarin gas or sarin simulant gas. Background technique [0002] The alarm and monitoring of chemical agents is an important means and basis for dealing with biochemical terrorist attacks. Sarin in chemical agents, code-named GB, also known as sarin gas, scientific name isopropyl meflodronate, English name Sarin, chemical formula: (CH 3 ) 2 CHOOPF (CH 3 ). Sarin can paralyze the central nervous system and is a commonly used chemical agent. It is classified as a nerve agent according to its harmful effect. The sarin simulant refers to diisopropyl fluorophosphate, abbreviated as DFP. [0003] Traditional chemical agent detection methods are often troubled by sensitivity and selectivity when detecting sarin gas and its sarin simulants, or are easily interfered by pesticides and insecticides, but cannot detect ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N27/12
CPCG01N27/125
Inventor 左国民高适张顺平李丹萍张立功张荣尤立娟李文丹赵男
Owner 中国人民解放军陆军防化学院
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