Laser crystal plasma modified etching assisted polishing processing method
A plasma and laser crystal technology, applied in the field of high-precision, low-damage, high-efficiency laser crystal materials, and ultra-smooth surface processing, can solve the problems of affecting material removal rate, grinding, polishing difficulties, slow response speed, etc., to avoid The effect of low rate correction process, improvement of processing efficiency, and increase of processing rate
Inactive Publication Date: 2018-06-15
TIANJIN UNIV
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Problems solved by technology
However, the reaction rate of sesquioxide laser crystals with acids is slow, and the material removal rate is still low even in aqua regia
In addition, crystalline materials are anisotropic, which affects the rate of material removal at different locations
At present, there is no report on the ultra-precision processing technology of sesquioxide laser crystal
Nd:YAG is the third largest hard and brittle material in nature after diamond and cubic boron nitride. It is more difficult to grind and polish, and it is easy to form surface and subsurface damage.
Existing various technological methods cannot completely solve the contradiction between the high surface accuracy and high surface finish of slab YAG crystal components, and it is still difficult to realize the processing and manufacturing of such components with high precision, high efficiency and low defects
In addition, the chemical properties of laser crystal materials are different, and it is difficult to form gaseous compounds, which makes it difficult to realize the plasma chemical evaporation processing method
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[0041]The invention takes the sesquioxide laser crystal as an example, adopts the plasma modified etching-assisted polishing method, and proposes a high-efficiency, high-precision, and non-damaging processing method for the sesquioxide laser crystal. The present invention will be described in further detail below according to the accompanying drawings and examples. The present invention adopts sub-aperture etching processing, polishing system and in-situ measurement system to realize crystal surface modification processing, and the specific implementation steps are as follows:
[0042] ⑴Cut the sesquioxide lutetium oxide crystal blank, and perform pretreatment on the surface such as rough grinding, fine grinding and / or mechanical polishing, use W7~W10 silicon carbide for rough grinding, grinding time 20~40min, use for fine grinding Alumina of W1~W3, the grinding time is 60~90min to obtain lutetium oxide crystal rough material;
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Abstract
The invention relates to a laser crystal plasma modified etching assisted polishing processing method. The method comprises a preprocessing step, a plasma processing step, an acid etching step and a polishing processing step which are carried out sequentially. The method avoids processing defects and surface/sub-surface damages possibly introduced by machining, grinding and polishing processes using conventional machines, and significantly improves the processing efficiency of sesquioxide laser crystals. Super-smooth, low/non-damage and high-precision laser crystal surfaces can be quickly obtained.
Description
technical field [0001] The invention belongs to the processing field of crystal materials. Specifically, it proposes a new method of plasma modified etching-assisted polishing processing for laser crystal components with low, non-damaging, high surface integrity requirements and low removal rate of traditional processing. Realize high-efficiency, high-precision, low-damage, and ultra-smooth surface processing of laser crystal materials. Background technique [0002] With the rapid development of the manufacturing industry, the scale of material processing has approached from micron and nanometer to atomic scale. As an emerging advanced processing method, laser has received more and more attention, especially the emergence of laser manufacturing, which has put forward higher and higher requirements for the performance of processing lasers. Finding new laser media with excellent optical properties and improving laser performance from the material level is of great significanc...
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IPC IPC(8): C30B33/12C30B33/10
CPCC30B33/10C30B33/12
Inventor 房丰洲吕鹏张巨帆
Owner TIANJIN UNIV
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