Laser crystal plasma modified etching assisted polishing processing method
A plasma and laser crystal technology, applied in the field of high-precision, low-damage, high-efficiency laser crystal materials, and ultra-smooth surface processing, can solve the problems of affecting material removal rate, grinding, polishing difficulties, slow response speed, etc., to avoid The effect of low rate correction process, improvement of processing efficiency, and increase of processing rate
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[0041]The invention takes the sesquioxide laser crystal as an example, adopts the plasma modified etching-assisted polishing method, and proposes a high-efficiency, high-precision, and non-damaging processing method for the sesquioxide laser crystal. The present invention will be described in further detail below according to the accompanying drawings and examples. The present invention adopts sub-aperture etching processing, polishing system and in-situ measurement system to realize crystal surface modification processing, and the specific implementation steps are as follows:
[0042] ⑴Cut the sesquioxide lutetium oxide crystal blank, and perform pretreatment on the surface such as rough grinding, fine grinding and / or mechanical polishing, use W7~W10 silicon carbide for rough grinding, grinding time 20~40min, use for fine grinding Alumina of W1~W3, the grinding time is 60~90min to obtain lutetium oxide crystal rough material;
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