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Composite-DBR-structure-based AlGaInP light-emitting diode

A technology of light-emitting diodes and dopants, applied in electrical components, circuits, semiconductor devices, etc., can solve problems such as insufficient reflection.

Inactive Publication Date: 2018-05-29
FOSHAN DONGSHEN METAL PROD CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the research of composite DBR, it has been reported that the composite DBR with two different reflection center wavelengths can reflect light with a certain inclination angle, but it cannot fully reflect light with a larger inclination angle.

Method used

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  • Composite-DBR-structure-based AlGaInP light-emitting diode
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  • Composite-DBR-structure-based AlGaInP light-emitting diode

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Embodiment Construction

[0014] In order to allow those skilled in the art to understand the present invention more clearly and intuitively, the present invention will be further described below.

[0015] The DBR material is selected from the high reflectivity AlAs / Al0.5Ga0.5As combination, and three kinds of DBRs with the same total logarithm and different structures are designed experimentally. Sample 1 is a conventional DBR with a reflection center wavelength of 630nm and a logarithm of 34 pairs; sample 2 is a composite DBR with a reflection center wavelength of 630nm and 680nm and a logarithm of 17 pairs respectively; sample 3 is a composite DBR with The wavelengths are 630nm, 680nm and 730nm, and the logarithms are 17 pairs, 10 pairs and 7 pairs respectively. The thickness design of each layer can be calculated according to the theoretical formula H / 4n, where is the reflection center wavelength, n is the refractive index corresponding to the wavelength, and the refractive index of Al As correspon...

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Abstract

The invention provides a composite-DBR-structure-based AlGaInP light-emitting diode. The preparation method comprises: a metal organic chemical vapor deposition system uses high-purity hydrogen as carrier gas, trimethyl gallium, trimethylaluminum, trimethylindium, arsine and phosphorane as Ga, Al, In, As, and P sources, and disilane and magnesocene as N and P type dopants. According to the invention, with the three-reflected central wavelength composite DBR, the reflection efficiency is high and the luminous efficiency of the AlGaInP LED is improved substantially. The influences on the luminous efficiency of the LED by the composite DBR with many reflected central wavebands is studied.

Description

technical field [0001] The invention relates to a compound DBR structure AlGaInP light emitting diode. Background technique [0002] Quaternary alloy material (Al x Ga 1-x ) 0.5 In 0.5 Light-emitting diodes (LEDs) with P as the active region have high internal quantum efficiency and are fully lattice-matched with GaAs substrates, so they are the preferred materials for preparing LEDs. At present, the main reason affecting the performance of AlGaInP LEDs is the low external quantum efficiency. People have studied various methods to improve the external quantum efficiency of AlGaInP light-emitting diodes, such as using distributed Bragg reflectors (DBR), flip-chip structures, and transparent substrates. , surface roughening, inverted pyramid, etc. Among them, the DBR reflective layer is used, that is, a periodic structure composed of two materials with different refractive indices is grown between the active region and the substrate, and the thickness of each layer is λ / 4...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/10H01L33/30H01L33/00
CPCH01L33/10H01L33/0062H01L33/30
Inventor 张勇
Owner FOSHAN DONGSHEN METAL PROD CO LTD
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