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E-beam bombardment resistant secondary electron emission composite film and preparation method thereof

A technology of secondary electron emission and electron beam bombardment, used in sputtering coating, ion implantation coating, vacuum evaporation coating, etc., can solve the problem of poor resistance to electron/ion beam bombardment and unstable secondary electron emission performance and other problems, to achieve the effect of high secondary electron emission coefficient, excellent resistance to electron beam bombardment, and good crystallinity of the film

Active Publication Date: 2018-05-29
BEIJING UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Aiming at the shortcomings of the single MgO film prepared by the traditional radio frequency magnetron sputtering method, the secondary electron emission performance is unstable and the electron / ion beam bombardment resistance is poor, the present invention adopts the DC magnetron sputtering technology, and the magnesium aluminum alloy with a certain composition ratio As the sputtering source material, the surface ground and polished pure silver sheet is used as the substrate material, argon is used as the working gas, and oxygen is used as the reactive gas. MgO / Al is prepared by DC sputtering and reactive deposition under certain vacuum conditions and certain temperature conditions. 2 o 3 Composite film

Method used

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  • E-beam bombardment resistant secondary electron emission composite film and preparation method thereof
  • E-beam bombardment resistant secondary electron emission composite film and preparation method thereof
  • E-beam bombardment resistant secondary electron emission composite film and preparation method thereof

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Experimental program
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Effect test

Embodiment 1

[0036] Install the prepared magnesium-aluminum alloy (magnesium:aluminum=5:1 molar ratio) target on the DC target position. Fix the cleaned and dried high-purity silver sheet on the sample stage with a 400°C high-temperature-resistant tape, and place it in the sample chamber of the magnetron sputtering coating system together with the sample stage. The silver sheet was cleaned by argon ion glow discharge under the condition of radio frequency power of 50W in the sampling chamber, and then the silver sheet was sent into the reaction chamber together with the sample table by the manipulator, and the mechanical pump and the molecular pump baffle valve were turned on to start vacuuming. Wait until the vacuum degree of the reaction chamber reaches the set background vacuum degree of 5×10 -4At Pa, start the resistance heating system and start heating the sample stage. When the temperature of the sample stage reaches the set temperature of 400°C, start to feed the mixed gas of oxygen...

Embodiment 2

[0040] Install the prepared magnesium-aluminum alloy (magnesium:aluminum=5:1 (molar ratio)) target on the DC target position. Fix the cleaned and dried high-purity silver sheet on the sample stage with a 400°C high-temperature-resistant tape, and place it in the sample chamber of the magnetron sputtering coating system together with the sample stage. The silver sheet was cleaned by argon ion glow discharge under the condition of radio frequency power of 50W in the sampling chamber, and then the silver sheet was sent into the reaction chamber together with the sample table by the manipulator, and the mechanical pump and the molecular pump baffle valve were turned on to start vacuuming. Wait until the vacuum degree of the reaction chamber reaches the set background vacuum degree of 5×10 -4 At Pa, start the resistance heating system and start heating the sample stage. When the temperature of the sample stage reaches the set temperature of 400°C, start to feed the mixed gas of oxy...

Embodiment 3

[0043] Install the prepared magnesium-aluminum alloy (magnesium:aluminum=5:1 (molar ratio)) target on the DC target position. Fix the cleaned and dried high-purity silver sheet on the sample stage with a 400°C high-temperature-resistant tape, and place it in the sample chamber of the magnetron sputtering coating system together with the sample stage. The silver sheet was cleaned by argon ion glow discharge under the condition of radio frequency power of 50W in the sampling chamber, and then the silver sheet was sent into the reaction chamber together with the sample table by the manipulator, and the mechanical pump and the molecular pump baffle valve were turned on to start vacuuming. Wait until the vacuum degree of the reaction chamber reaches the set background vacuum degree of 5×10 -4 At Pa, start the resistance heating system and start heating the sample stage. When the temperature of the sample stage reaches the set temperature of 400°C, start to feed the mixed gas of oxy...

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Abstract

The invention discloses an e-beam bombardment resistant secondary electron emission composite film and a preparation method thereof, and belongs to the technical field of preparation of functional film materials. By using high-pure metal silver as a substrate material, a magnesium aluminum alloy in a certain atomic ratio as a sputtering source material and high-pure argon-oxygen mixed gas as working and reaction gas, a direct-current reaction magnetron sputtering coating technology is adopted under a certain temperature condition, by adjusting parameters such as sputtering power, sedimentationtime, gas flow ratio and the like, the prepared MgO / Al2O3 composite film has higher secondary electron emission coefficients and better e-beam bombardment resistance performance. By adopting the method, the prepared MgO / Al2O3 composite film has the advantages of controlled thickness of the film, uniform components, high secondary electron emission coefficients, excellent e-beam bombardment resistant performance and the like.

Description

technical field [0001] The invention relates to a secondary electron emission composite thin film resistant to electron beam bombardment and a preparation method thereof, in particular to a preparation method of a composite thin film material with excellent secondary electron emission coefficient and resistance to electron beam bombardment, which belongs to the preparation of functional thin film materials technology field. Background technique [0002] Magnesium oxide (MgO) thin films are widely used in various vacuum electronic devices, such as image intensifiers, photomultiplier tubes, and electron multipliers, because of their good chemical inertness, high temperature stability, and high secondary electron emission coefficient. , cesium beam detectors in cesium atomic clocks, etc. However, MgO thin films continue to decompose under prolonged electron beam / ion beam bombardment, resulting in a decrease in the secondary electron coefficient. In addition, when the MgO film...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35C23C14/08C23C14/02
CPCC23C14/0036C23C14/021C23C14/022C23C14/028C23C14/081C23C14/35
Inventor 王金淑王飞飞周帆刘伟杨韵斐赖陈焦鹏华亚周
Owner BEIJING UNIV OF TECH
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