Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Preparing method for Cu2Se compound rotation target material

A technology of rotating targets and compounds, which is applied in metal material coating technology, ion implantation plating, pressure inorganic powder plating, etc., can solve the problems of high cost, uneven density, and material utilization rate not exceeding 40%, and achieve Low production cost, uniform internal density and high production efficiency

Active Publication Date: 2018-05-15
BAOTOU RES INST OF RARE EARTHS +1
View PDF2 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the current target production method is expensive, the density is relatively not uniform, and the material utilization rate does not exceed 40%.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0021] Cu 2 The preparation method of Se compound rotating target material specifically comprises the following steps:

[0022] Step 1: Prepare non-magnetic metal pipe fittings as the substrate, and select Cu with an average particle size of 1-5 μm 2 Se powder;

[0023] Non-magnetic metal pipe fittings are selected from non-magnetic stainless steel tubes, metal copper tubes, metal titanium tubes, nickel-chromium tubes or nickel-aluminum tubes. The surface is pretreated by sandblasting, cleaning, drying, etc.; Cu 2 The purity of the Se powder is 99.9%-99.999%, the total impurity content is less than 1000ppm, the single impurity element is less than 500ppm, and the powder below 1μm is screened out.

[0024] Step 2: Use supersonic cold spraying technology to spray Cu on the outer surface of the pretreated substrate 2 For Se powder, the thickness of the deposited layer does not exceed 20mm; use cold isostatic pressing technology for high-pressure treatment to further increase ...

Embodiment 1

[0031] a Cu 2 The preparation method of Se compound rotating target material specifically comprises the following steps:

[0032] (1) Prepare non-magnetic stainless steel pipes, the size of which is processed to meet the requirements of use, and the two ends are processed into screw buckles for connection as required, and the surface is pretreated by sandblasting, cleaning, drying, etc.; the purchase purity is 99.9% to 99.999% Cu 2 Se powder, and sieve out the powder below 1μm;

[0033] (2) Under the nitrogen protection atmosphere, the powder feeding device will Cu 2 The Se powder is sent to the supersonic cold spraying technology gun. When the non-magnetic stainless steel tube keeps rotating, the high-speed airflow will transfer the Cu 2 Se powder is sprayed layer by layer on the surface of the substrate in a scanning manner, each layer is 2 μm, until Cu 2 The accumulation of the Se layer reaches 7mm, and it is cooled to room temperature. Among them, the gas pressure at t...

Embodiment 2

[0038] a Cu 2 The preparation method of Se compound rotating target material specifically comprises the following steps:

[0039] (1) Prepare metal copper pipes, the size of which is processed to meet the requirements for use, and the two ends are processed into screw buckles for connection as required, and the surface is pretreated by sandblasting, cleaning, drying, etc.; purchase purity of 99.9% to 99.999% Cu 2 Se powder, and sieve out the powder below 1μm;

[0040] (2) Under the helium protective atmosphere, the powder feeding device will Cu 2 The Se powder is sent to the supersonic cold spraying technology gun. When the metal copper tube keeps rotating, the high-speed airflow will 2 Se powder is sprayed layer by layer on the surface of the substrate in a scanning manner, each layer is 4 μm, until Cu 2 The accumulation of the Se layer reaches 11mm, and it is cooled to room temperature. Among them, the gas pressure at the inlet of the cold spraying is 3MPa, and the gas t...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
particle sizeaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a preparing method for a Cu2Se compound rotation target material. The preparing method comprises the steps that a non-magnetic metal pipe fitting serves as a base body, and Cu2Se powder with the average granularity being 1-5 microns is selected; Cu2Se powder is sprayed to the outer surface of the base body through the supersonic speed cold spraying technology, and the thickness of a deposition layer does not exceed 20 mm; the isostatic cool pressing technology is adopted for high-pressure treatment, and the density is further improved; a rotation target material blank is obtained through high-temperature sintering, and the relative density of the rotation target material blank ranges from 96% to 98%; and the formed rotation target material blank is machined, cleaning and drying are conducted after machining, and the rotation target material is obtained. The obtained Cu2Se material is uniform in inner density, forming of a good coating is facilitated, and the defective rate of solar products is reduced.

Description

technical field [0001] The present invention relates to a kind of photoelectric material technology, specifically, relate to a kind of Cu 2 A method for preparing a Se compound rotating target. Background technique [0002] After nearly 20 years of development, solar cells have developed from silicon crystal systems to compound thin films. The light conversion efficiency of the silicon crystal system has reached more than 17% at present, but its manufacturing cost is high. In the early stage, the whole industry consumed a lot of energy due to the preparation of polysilicon and single crystal silicon, which had a great impact on the environment. In the process of thin film solar cells, Cu 2 Se compound is used as one of the targets for magnetron sputtering coating, which makes the production of solar cells simpler, lower in investment cost, smaller in production cost, and lower in final product cost. [0003] It is currently the most ideal method to prepare CIGS thin-film...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35C23C24/04
CPCC23C14/3414C23C14/35C23C24/04
Inventor 刘小鱼李静雅孙良成李慧鲁飞刘树峰王峰娄树普温永清
Owner BAOTOU RES INST OF RARE EARTHS
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com