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Radio frequency microsystem packaging module and manufacturing method thereof

A technology for encapsulating modules and manufacturing methods, which is applied in semiconductor/solid-state device manufacturing, electrical components, electric solid-state devices, etc., which can solve the problems of high cost, complex processing, and increased cost of RF front-end modules, so as to reduce the packaging size and eliminate coupling Function, the effect of improving electrical performance

Active Publication Date: 2018-02-09
芯知微(上海)电子科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the preparation of special SOI wafers with high resistance or traps is complex and expensive, which further increases the cost of RF front-end modules

Method used

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  • Radio frequency microsystem packaging module and manufacturing method thereof
  • Radio frequency microsystem packaging module and manufacturing method thereof
  • Radio frequency microsystem packaging module and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0035] In Embodiment 1, the radio frequency microsystem packaging module and its manufacturing method in the first embodiment are described in combination with the manufacturing method of the radio frequency microsystem packaging module and the radio frequency microsystem packaging module formed by the method. refer to figure 1 , the radio frequency microsystem encapsulation module of the present embodiment comprises the steps:

[0036] S10, providing a first substrate, the first substrate including the first semiconductor device layer on its front side;

[0037] S20, forming a plurality of regularly arranged first wafers including first radio frequency transistors on the first semiconductor device layer on the front side of the first substrate;

[0038] S30, providing a second substrate, the second substrate including a second semiconductor device layer on its front side;

[0039] S40, forming a plurality of regularly arranged second wafers including second radio frequency ...

Embodiment 2

[0078] In Embodiment 2, the radio frequency microsystem packaging module and its manufacturing method in the second embodiment are described in conjunction with the manufacturing method of the radio frequency microsystem packaging module and the radio frequency microsystem packaging module formed by the method. refer to figure 1 with Figure 8 , the radio frequency microsystem encapsulation module of the present embodiment comprises the steps:

[0079] S10, providing a first substrate, where the first substrate includes the first semiconductor device layer on the front side thereof.

[0080] S20, forming a plurality of regularly arranged first wafers including first radio frequency transistors on the first semiconductor device layer on the front side of the first substrate;

[0081] S30, providing a second substrate, the second substrate including a second semiconductor device layer on its front side;

[0082] S40, forming a plurality of regularly arranged second wafers inc...

Embodiment 3

[0111] In this embodiment, the same steps as in Embodiment 2 will not be repeated, the difference is that:

[0112] In this embodiment, the back of the third wafer is opposite to the front of the first wafer, and there are metal leads in the first dielectric filling sheet, and the metal leads are conductively interconnected with the first radio frequency transistor and the first radio frequency transistor in the first wafer. Describe the third chip.

[0113] Concrete steps are different from embodiment 2 in that:

[0114] refer to Figure 11 Before forming the first dielectric filling sheet in step S70, the interconnected metal leads 700 are formed on the front surface 100a of the first wafer and the front surface 500a of the third wafer, which can be formed by wire bonding well known to those skilled in the art. The metal lead 700 electrically interconnects the first RF transistor 120 on the first die and the third RF transistor 520 on the third die.

[0115] After that, t...

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PUM

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Abstract

The invention provides a radio frequency microsystem packaging module and a manufacturing method thereof, which relates to the application field of chip packaging of a high-density microsystem comprising a wireless communication radio frequency front-end module. The radio frequency microsystem packaging module comprises a first wafer with a first semiconductor device layer, a second wafer stackedon the first wafer and contained in the first wafer and provided with a second semiconductor device layer, a first inter-wafer interconnection wire group for realizing electrical coupling between thefirst wafer and the second wafer and a first medium filling sheet body placed on the first wafer and surrounding the second wafer. Through vertical wafer stacking and electrical interconnection, the packaging scale of the radio frequency microsystem packaging module is narrowed, and the electrical performance is improved.

Description

technical field [0001] The invention provides a radio frequency microsystem packaging module and a manufacturing method thereof, in particular to a radio frequency microsystem packaging module applied to a radio frequency front end and a manufacturing method thereof. Background technique [0002] Today, high-density, high-performance, low-power consumption, low-cost multi-semiconductor chips and device microsystem packages have become the core of system design and manufacturing of modern integrated circuit chip products, especially for mobile communication terminals, portable electronics, The needs of IoT terminal applications. [0003] Take the radio frequency front-end module widely used in wireless communication intelligent terminals, such as smart phones, as an example. The RF front-end module installed in various wireless communication terminal systems is the core system that realizes the front-end RF signal receiving and transmitting functions of the entire wireless c...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L25/065H01L23/48H01L21/98
CPCH01L23/481H01L25/0657H01L25/50H01L2224/48091H01L2224/73265H01L2924/00014
Inventor 王晓川
Owner 芯知微(上海)电子科技有限公司
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