Inorganic oxide quantum dot light emitting diode

A technology of quantum dot luminescence and inorganic oxides, which is applied in the manufacture of electrical components, electrical solid devices, semiconductor/solid devices, etc., can solve the problems of non-radiative recombination, quantum dot charging, etc., and the method is simple, easy to process into films, The effect of improving the external quantum efficiency

Inactive Publication Date: 2018-01-19
NANCHANG HANGKONG UNIVERSITY
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Problems solved by technology

[0003] However, due to the different carrier transport efficiencies of the electron and hole transport layers, the number of electrons in quantum dot light-emitting diodes is often 2 to 3 orders of magnitude of the number of holes, resulting in the accumulation of electrons in the quantum dot light-emitting layer, too much The electrons will cause quantum dot charging and non-radiative recombination

Method used

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  • Inorganic oxide quantum dot light emitting diode
  • Inorganic oxide quantum dot light emitting diode
  • Inorganic oxide quantum dot light emitting diode

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Embodiment 1

[0034] The substrate and anode are made of commercial ITO transparent conductive glass. After cleaning with cleaning solution, deionized water, acetone and isopropanol for 15 minutes each, treat it in a UV ozone cleaner for 20 minutes, and then transfer it into a glove box (O2<1ppm, H2O<1ppm) for spin coating.

[0035] On the cleaned ITO transparent conductive glass, spin-coat nano-molybdenum oxide at a speed of 3000 rpm for 50 s, and anneal at 150° C. for 30 min after spin coating to form a 10 nm hole injection layer.

[0036] On the molybdenum oxide layer, continue to spin-coat 8 mg / ml poly-TPD chlorobenzene solution at a speed of 3000 rpm for 30 seconds, and then anneal at 150° C. for 30 minutes to form a 30-nm hole injection layer. As a hole transport layer, poly-TPD has excellent hole transport ability.

[0037] The 15 mg / ml CdSe / CdS quantum dot n-hexane solution was spin-coated on the hole transport layer, and placed in the glove box for 30 minutes after completion, to ...

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Abstract

The invention provides an inorganic oxide quantum dot light emitting diode and a preparation method therefor. The inorganic oxide quantum dot light emitting diode comprises a positive electrode, a hole transport layer, a quantum dot light emitting layer, an electron transport layer and a negative electrode which are arranged adjacently, wherein the hole transport layer and the electron transport layer are both prepared from an inorganic semiconductor material; and the oxygen ion vacancy quantity in the inorganic semiconductor material of the hole transport layer can be controlled by regulatingthe annealing temperature, and a small amount of oxygen ion vacancy has an effect similar to N type doping, so that hole injection and transportation can be greatly improved. The quantum dot light emitting diode can perform long-term stable operation, so that hole and electron injection and transport rate in the device can be improved, particularly the hole injection efficiency; and electron andhole quantity can be balanced, and the external quantum efficiency of the quantum dot light emitting diode is improved.

Description

technical field [0001] The invention relates to the field of quantum dot light emitting diodes, in particular to an inorganic oxide quantum dot light emitting diode and a preparation method thereof. Background technique [0002] PEDOT:PSS is often used as a hole injection layer for electroluminescent devices or organic solar cells. It has excellent conductivity and can be spin-coated, printed or ink-jetted to form a conductive film in the form of an aqueous solution. However, the pH of the PEDOT:PSS aqueous solution is generally around 1, which is easy to cause corrosion on the surface of the commonly used ITO transparent electrode, and the hygroscopicity of the PEDOT:PSS film will seriously affect the working life of the device. Some transition metal oxides are good P-type semiconductors and can be used as hole injection layers instead of PEDOT:PSS in devices. Generally speaking, these inorganic semiconductor metal oxides have good stability, which can stabilize the device...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/50H01L51/54H01L51/56
Inventor 张芹顾小兵蒋杰金肖张青松
Owner NANCHANG HANGKONG UNIVERSITY
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