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Formaldehyde sensor based on organic field effect transistor

A formaldehyde sensor and organic field technology, applied in the field of sensors, can solve the problems of pollution, poor flexibility of formaldehyde sensors, high detection limit of formaldehyde sensors, etc., and achieve the effect of solving secondary pollution, excellent water absorption characteristics, and easy industrialized large-scale production

Active Publication Date: 2018-01-09
UNIV OF ELECTRONIC SCI & TECH OF CHINA
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] In order to solve the problem that the detection limit of the existing formaldehyde sensor is not high, the present invention provides a formaldehyde sensor based on an organic field effect tube and its preparation method, which solves the problem of the high detection limit of the existing formaldehyde sensor and the existing formaldehyde sensor. The sensor has problems such as poor flexibility and easy pollution to the environment

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  • Formaldehyde sensor based on organic field effect transistor
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preparation example Construction

[0036] The preparation method of the organic semiconductor layer can be a method in plasma-enhanced chemical vapor deposition, thermal oxidation, spin coating, vacuum evaporation, drop film, embossing, printing or air spray; the thickness of the organic semiconductor layer 4 is 50 ~120nm.

[0037] The materials of the gate electrode, source electrode and drain electrode are all one or more of graphene, carbon nanotubes, metal element nanowires, zinc oxide, titanium oxide, indium tin oxide or polymer electrode materials. The preparation method It can be one of various deposition methods such as vacuum thermal evaporation, magnetron sputtering, plasma-enhanced chemical vapor deposition, screen printing, printing, and spin coating. The thickness of the gate electrode, the source electrode and the drain electrode are all 50-80nm.

[0038] The metal nanowires are iron nanowires, copper nanowires, silver nanowires, gold nanowires, aluminum nanowires, nickel nanowires, cobalt nanowi...

Embodiment 1

[0052] The preparation method is as follows:

[0053] ① Thoroughly clean the PI substrate sputtered with 50nm ITO as the gate electrode, and dry it with dry nitrogen after cleaning;

[0054] ② Prepare a PS film on ITO by spin coating to form a gate insulating layer of 100nm;

[0055] ③The spin-coated PS film is heated and baked;

[0056] 4. Spin-coat indigo on the grid insulating layer: diatom mud mass ratio is 100nm of the organic semiconductor layer of 97:3;

[0057] ⑤ Vacuum evaporation is used to prepare 80nm copper source electrodes and drain electrodes.

[0058] The formaldehyde response characteristics of the device are tested, and the saturation current I of the device is measured SD =6μA, carrier mobility μ=2×10 -3 cm 2 / Vs, threshold voltage V TH =-14V, good response to formaldehyde at room temperature.

Embodiment 2

[0060] The preparation method is as follows:

[0061] ① Thoroughly clean the PEI substrate sprayed with 80nm silver nanowires as the gate electrode, and dry it with dry nitrogen after cleaning;

[0062] ② Prepare a PMMA film on the silver nanowire by spin coating method to form a gate insulating layer of 520nm;

[0063] ③Heating and baking the spin-coated PMMA film;

[0064] 4. Spin-coat indigo on the grid insulating layer: diatom mud mass ratio is 120nm of the organic semiconductor layer of 94:6;

[0065] ⑥A silver source electrode and a drain electrode of 70nm were prepared by vacuum evaporation.

[0066] The formaldehyde response characteristics of the device are tested, and the saturation current I of the device is measured SD =12μA, carrier mobility μ=0.004cm 2 / Vs, threshold voltage V TH =-16V, good response to formaldehyde at room temperature.

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Abstract

The invention belongs to the technical field of sensors, and discloses a formaldehyde sensor based on an organic field effect transistor, and a preparation method thereof, used for solving the problemthat the existing formaldehyde sensor is high in lower limit of detection. The formaldehyde sensor based on the organic field effect transistor provided by the invention comprises a substrate, a gridelectrode, a grid insulation layer and an organic semiconductor layer sequentially arranged from the bottom up, wherein a source electrode and a drain electrode are connected with the upper end of the organic semiconductor layer, the organic semiconductor layer is prepared by mixing indigo blue or indigo blue derivatives with diatom ooze, and the mass percentage of the diatom ooze in the organicsemiconductor layer is 3%-20%. According to the method provided by the invention, the problem that the existing formaldehyde sensor is high in lower limit of detection is solved, and the problems thatthe existing formaldehyde sensor is poor in flexibility and prone to pollute environment are also solved.

Description

technical field [0001] The invention belongs to the technical field of sensors, and in particular relates to a formaldehyde sensor based on an organic field effect tube and a preparation method thereof. Background technique [0002] Formaldehyde is a colorless gas with a pungent smell, which is irritating to human eyes and nose, and is closely related to human social activities. With the development of modernization, the accurate measurement of formaldehyde is very important in daily life, meteorology, It plays an increasingly important role in medicine and industrial and agricultural production. [0003] There are many types of formaldehyde sensors. At present, the research hotspots at home and abroad are mainly concentrated on formaldehyde oxide gas sensors, formaldehyde gas molecular sieve sensors, formaldehyde surface acoustic wave gas sensors, visual fluorescent formaldehyde sensors and formaldehyde gas electronic noses. However, the traditional formaldehyde sensor sti...

Claims

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Application Information

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IPC IPC(8): H01L51/05H01L51/40G01N27/414
Inventor 于军胜范惠东庄昕明杨付强
Owner UNIV OF ELECTRONIC SCI & TECH OF CHINA
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