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Alloy bonding wire of gold, silver and palladium and preparation method thereof

A technology of alloy bonding and wire, which is applied in semiconductor/solid-state device manufacturing, circuits, electric solid-state devices, etc., can solve problems such as no technological breakthroughs, achieve good performance, improve processing performance, and meet performance and quality requirements.

Inactive Publication Date: 2017-11-03
山东赢耐鑫电子科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, silver-based alloy bonding wires have replaced gold wires in low-end packaging, while high-end packaging still has not achieved technological breakthroughs

Method used

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  • Alloy bonding wire of gold, silver and palladium and preparation method thereof
  • Alloy bonding wire of gold, silver and palladium and preparation method thereof
  • Alloy bonding wire of gold, silver and palladium and preparation method thereof

Examples

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Embodiment 1

[0021] An alloy bonding wire of gold, silver and palladium, including gold element, silver element, palladium element and impurities, the mass fraction of gold element accounting for the total mass is 5%, the mass fraction of palladium element accounting for the total mass is 15%, silver The mass fraction of elements in the total mass is 80%, and the impurities are zero.

[0022] The preparation method of the alloy bonding wire of described gold, silver and palladium, concrete steps are as follows:

[0023] Step 1, weighing raw materials: weighing gold with a purity of 99.999% or more, silver with a purity of 99.999% or more, and palladium with a purity of 99.99% or more;

[0024] Step 2, preparing the alloy; in a vacuum of 0.1*10 -3 Prepare silver-palladium pre-alloy under the environment of pa and 1600 ℃, this vacuum degree can lower the melting point of pre-alloy;

[0025] Step 3, melting and casting: in a vacuum of 1*10 -3 Refining at 1300°C for 30 minutes in an interme...

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Abstract

The invention discloses an alloy bonding wire of gold, silver and palladium. The alloy bonding wire comprises gold element, silver element, palladium element and impurities, wherein the mass percentage of the gold element is 1% to 5%; the mass percentage of the palladium element is 1% to 15%; the mass percentage of the silver element is 80% or greater than 80%; and the balance is the impurities. A preparation method of the bonding wire comprises the following steps: step one, weighing raw materials; step two, preparing alloy; step three, casting; step four, wire drawing; step five, cleaning; step six, annealing; and step seven, compound winding. Silver and palladium are pre-alloyed, gold and pure silver are cast into a rod material, and then wire drawing, annealing, cleaning and compound winding are carried out to complete product preparation; in the preparation process, various technological parameters are reasonably used, the processing performance of the silver-based alloy bonding wire is improved, and the oxidation resistance and corrosion resistance are greatly improved; and moreover, the bonding wire disclosed by the invention is extremely good and stable in using performance, and can meet the requirement on the performance quality of the bonding wire in the field of semiconductor high-end packaging.

Description

technical field [0001] The invention relates to the field of metal bonding wires, in particular to an alloy bonding wire of gold, silver and palladium. Background technique [0002] With the development of integrated circuits and discrete devices towards multi-lead packaging, high integration and miniaturization, high-end semiconductor packaging requires thinner and higher-strength bonding wires for narrow-pitch and long-distance wire bonding. Semiconductor packaging companies For bonding wires, there are increasingly higher requirements such as lower arc, longer arc length, thinner diameter, high temperature performance, etc., and at the same time, it is required to reduce the cost of bonding wires. [0003] At present, most of the high-end packages on the market are packaged with bonded gold wires. At present, there are mainly four types of bonding wires in the semiconductor packaging market, namely gold, silver, copper and aluminum. Gold wire has been dominant in bondin...

Claims

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Application Information

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IPC IPC(8): H01L23/49H01L21/48C22C5/06C22C1/02C22F1/14
CPCH01L24/43H01L24/45C22C1/02C22C5/06C22F1/14H01L2224/45139H01L2924/00011H01L2924/01049
Inventor 李军田鹏
Owner 山东赢耐鑫电子科技有限公司
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