Source-drain composite field plate vertical type power electronic device

Abstract

The invention discloses a source-drain composite field plate vertical type power electronic device. The vertical type power electronic device comprises a schottky drain (11), a substrate (1), a drifting layer (2), an aperture layer (3), two symmetrical current blocking layers (4), a channel layer (6), a barrier layer (7) and a gate (10) from the bottom up; two sources (9) are deposited on the two sides of the barrier layer; two injection regions (8) are arranged below the two sources; all regions, except the schottky drain bottom, are covered with a passivation layer (12); an aperture (5) is formed between the two current blocking layers; the current blocking layers adopt a two-stage-step structure; an integral number of source steps and drain steps are etched on the upper part and the back surface of the left and right sides of the passivation layer respectively; metal is deposited on the steps to form a source field plate (13) and a drain field plate (14) respectively; and the source field plate is electrically connected with the sources while the drain field plate is electrically connected with the drain. The vertical type power electronic device has high bidirectional blocking function, low conduction resistance and high rate of finished products, and can be used for a power electronic system.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, and relates to a semiconductor device, in particular to a source-drain compound field plate vertical power electronic device, which can be used in a power electronic system. technical background [0002] Power semiconductor devices are the core components of power electronics technology. As energy and environmental issues become increasingly prominent, research and development of new high-performance, low-loss power devices has become one of the effective ways to improve power utilization, save energy, and alleviate energy crises. In the research of power devices, there is a serious restrictive relationship between high speed, high voltage and low on-resistance. Reasonable and effective improvement of this restrictive relationship is the key to improving the overall performance of the device. With the development of microelectronics technology, the performance of traditional first-genera...

AI Technical Summary

Problems solved by technology

However, up to now, there is still no precedent of the field plate structure being successfully applied to GaN-based current aperture heterojunction field effect devices at home and abroad. This is mainly due to the inherent defects in the structure of GaN-based current aperture heterojunction field effect devices. As a result, the strongest electric field peak in the device drift layer is located near the interface between the current blocking layer and the aperture layer, and the electric field peak is far away from the surfaces on both sides of the drift layer, so the field plate structure can hardly play the role of effectively modulating the electric field distribution in the device, even in GaN The field plate structure is used in the base current aperture heterojunction field effect device, and there is almost no improvement in device performance

[0008] In addition, the existing GaN-based current aperture heterojunction field effect devices all use ohmic drains. When a very low reverse voltage is applied to the device drain, the current blocking layer in the device will fail, forming a large drain-source Leakage current, and as the drain reverse voltage increases, the device gate will also open forward, and a large gate current will pass, eventually leading to device failure

Therefore, none of the existing GaN-based current aperture heterojunction field effect devices can realize the reverse blocking function. break feature has no effect

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