Source echelon field plate vertical power transistor

Abstract

The invention discloses a source step field plate vertical power transistor comprising a substrate (1), a drift layer (2), an aperture layer (3), a three-step blocking layer (4), a channel layer (6), a barrier layer (7), and a passivation layer (12). Sources (9) are deposited at the two sides of the barrier layer. A gate (10) is deposited on the barrier layer between the sources. A drain (11) is deposited under the substrate. The passivation layer (12) wraps all areas except the bottom of the drain. The two sides of the passivation layer are engraved with steps. Metal is deposited on the steps to form step field plates (13). The step field plates are electrically connected with the sources. The source step field plate vertical power transistor of the invention has the advantages of high breakdown voltage, simple process, low on resistance and high yield, and can be used in power electronic systems.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, and relates to a semiconductor device, in particular to a vertical power transistor with a source stepped field plate, which can be used in a power electronic system. [0002] technical background [0003] Power semiconductor devices are the core components of power electronics technology. As energy and environmental issues become increasingly prominent, research and development of new high-performance, low-loss power devices has become one of the effective ways to improve power utilization, save energy, and alleviate energy crises. In the research of power devices, there is a serious restrictive relationship between high speed, high voltage and low on-resistance. Reasonable and effective improvement of this restrictive relationship is the key to improving the overall performance of the device. With the development of microelectronics technology, the performance of traditional first-gener...

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Problems solved by technology

However, up to now, there is still no precedent of the field plate structure being successfully applied to GaN-based current aperture heterojunction field effect devices at home and abroad. This is mainly due to the inherent defects in the structure of GaN-based current aperture heterojunction field effect devices. As a result, the strongest electric field peak in the device drift layer is located near the interface between the current blocking layer and the aperture layer, and the electric field peak is far away from the surfaces on both sides of the drift layer, so the field plate structure can hardly play the role of effectively modulating the electric field distribution in the device, even in GaN The field plate structure is used in the base current aperture heterojunction field effect device, and there is almost no improvement in device performance

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