Method for preparing nano SiC and Yb reinforced A356.2 alloy
A nano-alloy technology, applied in the field of preparing nano-SiC, Yb-reinforced A356.2 alloy, can solve the problems of difficulty in preparing SiC-Al composite materials, non-wetting of silicon carbide and aluminum liquid, limited research on heavy rare earth elements, etc., to achieve The effect of increasing pouring quality, reducing gas content and improving mechanical properties
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Embodiment 1
[0055] A method for preparing nano-SiC-Yb reinforced A356.2 alloy, comprising the following steps:
[0056] 1) Pretreatment of silicon carbide:
[0057] (1) Weigh 5.25g of silicon carbide with an average particle size of 5nm-90nm, add 20ML of alcohol, and ultrasonically disperse for 30 minutes;
[0058] (2) Put the silicon carbide that has been ultrasonicated into a blast drying oven, and dry it at 70°C for 2 hours;
[0059] (3) After drying, put it into the grinding bowl and grind for 2 hours;
[0060] (4) SiC is put into a quartz crucible, heated to 300°C for 30 minutes, then heated to 1200°C for 5 hours, and stirred every 30 minutes for 40 seconds;
[0061] (5) Remove particles larger than 100nm from the pretreated SiC.
[0062] 2) Subsequent processing of SiC
[0063] (1) Place the magnetron sputtered glass slide in a beaker filled with acetone, and clean it in an ultrasonic cleaner for 20 minutes; take out the glass slide and clean it in absolute ethanol for 20 minute...
Embodiment 2
[0081] A method for preparing nano-SiC, Yb reinforced A356.2 alloy, comprising the following steps:
[0082] 1) Pretreatment of silicon carbide:
[0083] (1) Weigh 5.25g of silicon carbide with an average particle size of 5nm-90nm, add 20ML of alcohol, and ultrasonically disperse for 30 minutes;
[0084] (2) Put the silicon carbide that has been ultrasonicated into a blast drying oven, and dry it at 70°C for 2 hours;
[0085] (3) After drying, put it into the grinding bowl and grind for 2 hours;
[0086] (4) SiC is put into a quartz crucible, heated to 295°C for 30 minutes, then heated to 1195°C for 5 hours, and stirred every 30 minutes for 40 seconds;
[0087] (5) Remove particles larger than 100nm from the pretreated SiC.
[0088] 2) Subsequent processing of SiC
[0089] (1) Place the magnetron sputtered glass slide in a beaker filled with acetone, and clean it in an ultrasonic cleaner for 20 minutes; take out the glass slide and clean it in absolute ethanol for 20 minut...
Embodiment 3
[0106] A method for preparing nano-SiC, Yb reinforced A356.2 alloy, comprising the following steps:
[0107] 1) Pretreatment of silicon carbide:
[0108] (1) Weigh 5.25g of silicon carbide with an average particle size of 50nm, add 20ML of alcohol, and ultrasonically disperse for 30 minutes;
[0109] (2) Put the silicon carbide that has been ultrasonicated into a blast drying oven, and dry it at 70°C for 2 hours;
[0110] (3) After drying, put it into the grinding bowl and grind for 2 hours;
[0111] (4) SiC is put into a quartz crucible, heated to 305°C for 30 minutes, then heated to 1205°C for 5 hours, and stirred every 30 minutes for 40 seconds;
[0112] (5) Remove particles larger than 100nm from the pretreated SiC.
[0113] 2) Subsequent processing of SiC
[0114](1) Place the magnetron sputtered glass slide in a beaker filled with acetone, and clean it in an ultrasonic cleaner for 20 minutes; then take out the glass slide and clean it in absolute ethanol for 20 minut...
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