Preparation method of PEDOT:PSS-MoO3/silicon nanowire array organic-inorganic hybrid solar cell

A technology of silicon nanowire arrays and solar cells, which is applied in semiconductor/solid-state device manufacturing, circuits, photovoltaic power generation, etc., can solve the problems of easily corroded metal electrodes, lower battery stability, and poor conductivity, so as to improve photoelectric conversion efficiency and reduce Resistivity and the effect of improving energy conversion efficiency

Inactive Publication Date: 2017-05-31
HENAN NORMAL UNIV
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Problems solved by technology

PEDOT:PSS/silicon nanowire hybrid solar cell is a low-cost organic-inorganic hybrid solar cell. However, due to the poor conductivity and acidity of the PEDOT:PSS organic polymer itself, the easily corroded metal electrodes reduce the battery capacity. stability
MoO 3 It is a hole transport material with stable physical and che

Method used

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  • Preparation method of PEDOT:PSS-MoO3/silicon nanowire array organic-inorganic hybrid solar cell
  • Preparation method of PEDOT:PSS-MoO3/silicon nanowire array organic-inorganic hybrid solar cell

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Embodiment 1

[0017] (1) Ultrasonically shake the silicon substrate with acetone and alcohol in turn, and then heat and boil for 10 minutes with a mixed cleaning solution of hydrogen peroxide and sulfuric acid. The volume ratio of hydrogen peroxide and sulfuric acid in the mixed cleaning solution is 1:3;

[0018] (2) Place the silicon substrate cleaned in step (1) on the surface filled with HF-AgNO 3 In the autoclave of corrosive liquid, the HF-AgNO 3 HF and AgNO in corrosion solution 3 The molar concentration of each is 0.02mol / L, and the autoclave is sealed and placed in an oven at 50°C for 10 minutes;

[0019] (3) Take out the silicon substrate from the autoclave, clean the silver-gray metal coating on the surface of the silicon substrate with deionized water, and then place the silicon substrate in aqua regia to heat and boil to remove the silicon substrate surface. Metal cladding and silver particles;

[0020] (4) Clean the silicon substrate with deionized water and soak it in HF so...

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Abstract

The invention discloses a preparation method of a PEDOT:PSS-MoO3/silicon nanowire array organic-inorganic hybrid solar cell and belongs to the technical field of photovoltaic materials. The preparation method is characterized by including: using water-soluble MoO3 as a dopant of PEDOT:PSS to form a PEDOT:PSS-MoO3 solution; spin-coating the PEDOT:PSS-MoO3 solution on a silicon substrate with a silicon nanowire array to form a transparent thin film. The silicon organic-inorganic hybrid cell adopts PEDOT:PSS-MoO3 as a hole transmission layer, so that energy conversion efficiency of the silicon hybrid solar cell is improved, acidity of PEDOT:PSS is lowered, and device stability is improved. The preparation method has low requirements on preparation environment and does not need high-temperature vacuum equipment, so that photoelectric conversion efficiency of the silicon solar cell is improved effectively.

Description

technical field [0001] The invention belongs to the technical field of photovoltaic materials, in particular to a PEDOT:PSS-MoO 3 The preparation method of silicon nanowire array organic-inorganic hybrid solar cell. Background technique [0002] With the development and progress of the times, energy consumption is becoming more and more serious, but solar cells can effectively alleviate the environmental crisis and energy crisis. According to statistics, silicon solar cells account for 90% of solar cell types. The traditional silicon solar cell preparation process requires high temperature and high material purity, which is not easy to popularize and apply. Later, the proposal of silicon nanowires effectively solved the above problems. The controlled synthesis of silicon nanowires has made great progress in the past ten years. Combination and other means, the photoelectric conversion efficiency has been greatly developed, and the highest photoelectric conversion efficienc...

Claims

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Application Information

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IPC IPC(8): H01L51/42H01L51/44
CPCH10K30/80H10K30/00Y02E10/549
Inventor 蒋玉荣李德铭王振豪
Owner HENAN NORMAL UNIV
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