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High-energy storage density solid-state dielectric capacitor and preparation method thereof

A high energy storage density, dielectric technology, used in capacitor manufacturing, fixed capacitor dielectrics, capacitors and other directions, can solve the problems of small dielectric constant, cumbersome use method, limited use range, etc., to improve the breakdown field strength, improve the dielectric Electric constant, the effect of promoting energy storage density

Inactive Publication Date: 2017-05-24
TONGJI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in the capacitor with aluminum oxide film as the dielectric, it needs to be hydrated before use to store the hydroxyl groups for anodic oxidation reaction. In addition, it needs to be electrochemically treated to achieve the purpose of repair. The method of use is relatively cumbersome
Moreover, when used at high temperature, it is difficult to effectively realize the anodic oxidation and self-repair of the capacitor due to the loss of water. Therefore, this solid capacitor with aluminum oxide film as the dielectric has a strong dependence on the temperature and humidity of the operating environment, while limit its use
In addition, the dielectric constant of alumina itself is small, and it is difficult to obtain a high energy storage density

Method used

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  • High-energy storage density solid-state dielectric capacitor and preparation method thereof
  • High-energy storage density solid-state dielectric capacitor and preparation method thereof
  • High-energy storage density solid-state dielectric capacitor and preparation method thereof

Examples

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Effect test

Embodiment 1

[0042] Such as figure 1 As shown, it is an unused capacitor unit cross-sectional schematic diagram and a schematic circuit diagram, the capacitor unit includes a silicon wafer 1 (substrate substrate), a lower electrode 2, an aluminum oxide / titania composite dielectric film 3 and an upper electrode 4, figure 1 Among them, the lower electrode 2 and the upper electrode 4 are homogeneous aluminum thin films with a thickness of 200nm; the aluminum oxide / titania composite dielectric thin film 3 has a thickness of 300nm.

[0043] The preparation of the capacitor unit with high energy storage density solid dielectric capacitor includes the following steps:

[0044] (1) Grind 0.02mol aluminum isopropoxide, then add it into 50mL ethylene glycol ether solvent for ultrasonic dispersion for 20min, and stir at a constant temperature of 70°C, then add 0.02mol acetylacetone, stir at a constant temperature of 70°C for 30min, and finally Add 10mL of glacial acetic acid, stir at a constant temp...

Embodiment 2

[0052] In this example, if figure 2 As shown, after the high energy storage density dielectric capacitor unit is manufactured, the capacitor unit cross-sectional schematic diagram when the upper electrode is applied with a forward voltage during use, the capacitor unit includes a silicon wafer 1, a lower electrode 2, and an alumina / titania composite dielectric film 3 , upper electrode 4 (Al thin film) and anodized film 5 (anode Al 2 o 3 film), wherein the aluminum oxide / titania composite dielectric film 3 is arranged between the lower electrode 2 and the upper electrode 4, and the interface between the aluminum oxide / titania composite dielectric film 3 and the upper electrode 4 is a layer formed during use and has an automatic Anode Al with repair function 2 o 3 membrane. During use, as the voltage is applied for a longer time, in the forward voltage direction, a layer of dense Al will be formed between the aluminum oxide / titania composite dielectric film 3 and the upper ...

Embodiment 3

[0055] In this example, if image 3 As shown, the schematic diagram of the cross-section of the capacitor unit when the lower electrode is applied with a forward voltage during use, the capacitor unit includes a silicon chip 1, a lower electrode 2, an aluminum oxide / titania composite dielectric film 3, an upper electrode 4 and an anodic oxide film 5 (anode al 2 o 3 film), wherein the aluminum oxide / titania composite dielectric film 3 is arranged between the lower electrode 2 and the upper electrode 4, and the interface between the aluminum oxide / titania composite dielectric film 3 and the upper electrode 4 is a layer formed during use and has an automatic Anode Al with repair function 2 o 3 membrane. During use, as the voltage is applied for a longer time, a layer of dense Al will be formed between the aluminum oxide / titania composite dielectric film 3 and the lower electrode 2 in the forward voltage direction. 2 o 3 Thin film to obtain high energy storage density solid ...

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Abstract

The invention relates to a high-energy storage density solid-state dielectric capacitor and a preparation method thereof. The capacitor comprises a substrate, a lower electrode, an aluminum oxide / titanium dioxide composite dielectric film and an upper electrode which are sequentially arranged from bottom to top, wherein the lower electrode coats the substrate; the aluminum oxide / titanium dioxide composite dielectric film is located between the upper electrode and the lower electrode; and the upper electrode and the lower electrode are valve metal films with anodic oxidation capacity. Compared with the prior art, the high-energy storage density solid-state dielectric capacitor has the advantages of being easy to produce, wide in application range, high in energy storage density, safe and reliable and the like.

Description

technical field [0001] The invention belongs to the technical field of capacitor preparation, and in particular relates to a solid dielectric capacitor with high energy storage density and a preparation method thereof. Background technique [0002] Microelectronics technology is a high-tech electronic technology based on various semiconductor devices with integrated circuits as the core. With the continuous development of social informatization, its irreplaceable role in military and civilian fields has become increasingly apparent. With the advancement of technology, high integration, low power consumption, high performance, high reliability, and miniaturization are the inevitable direction of the development of microelectronics technology. However, problems such as material preparation and microelectronics technology seriously restrict the further development of microelectronics technology. Therefore, it is imperative to seek continuous innovation in microelectronics tech...

Claims

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Application Information

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IPC IPC(8): H01G4/33H01G4/10H01G13/00
CPCH01G4/10H01G4/33H01G13/00H01G13/003H01G13/006
Inventor 姚曼文苏振李菲彭勇陈建文姚熹
Owner TONGJI UNIV
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