Microwave dielectric ceramic by low-temperature co-fired ceramics

A technology of low-temperature co-fired ceramics and microwave dielectric ceramics, which is applied in the field of manufacturing microwave dielectric ceramics, and can solve problems such as large changes in sintered density, uneven powder dispersion, and reduction

Inactive Publication Date: 2017-05-24
PROSPERITY DIELECTRICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, if adding B 2 o 3 and other low-melting oxides, due to B 2 o 3 It is easy to react with water, methanol, ethanol and commonly used binders such as PVA and PVB to produce a gel effect, resulting in poor dispersion of powder in the ribbon manufacturing process in the Multi-layer Ceramic Capacitor (MLCC) process Uniformity makes the sintered density change greatly
In addition B 2 o 3 The solubility in water and alcohol is large, and it is easy to make B due to the powder filtration and drying stage in the latter part of the process. 2 o 3 component loss, resulting in B 2 o 3 Reduction leads to lower sintered density and loss of dielectric properties

Method used

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Experimental program
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Effect test

Embodiment -1

[0025] when (1-x)Ba 5 Nb 4 o 15 -xBaNb 2 o 6 When the ceramic material is equal to 30, mix 0wt%-15wt% BaO-B 2 o 3 -SiO 2 When the glass material is sintered at 890°C, it can be found that when 0wt% glass is added, the sintering is not dense, and the dielectric constant cannot be increased due to the large number of pores in the ceramic, only reaching 25.4. In addition, if 1wt%-15wt% BaO -B 2 o 3 -SiO 2 After glass, the density increases, and the dielectric constant is between 29.5-30.4. In addition, the quality factor also increases to 10,284 and 16,136GHz due to the increase in density. The temperature capacitance coefficient is -36 to -43ppm / ℃, and the temperature frequency The coefficient is 19 to 21ppm / ℃, and the insulation resistance reaches 2.5×10 11 to 9.4×10 11 Ω.

Embodiment -2

[0027] when (1-x)Ba 5 Nb 4 o 15 -xBaNb 2 o 6 When the ceramic material is equal to 50, mix 0wt%-15wt% BaO-B 2 o 3 -SiO 2 When the glass material is sintered at 890°C, it can be found that when 0wt% glass is added, the sintering is not dense, and the dielectric constant value cannot be increased to 17.3 due to the large number of pores in the ceramic. In addition, if 1wt%-15wt% of BaO-B is added 2 o 3 -SiO 2 After glass, the density increases, the dielectric constant is between 19.6-20.2, the quality factor is also due to the increase in density, and the quality factor increases to 11,765 and 15,766GHz, the temperature capacitance coefficient is -2 to 2ppm / ℃, and the temperature frequency coefficient is -1 to 1ppm / ℃, insulation resistance up to 3.3×10 11 to 6.7×10 11 Ω.

Embodiment -3

[0029] when (1-x)Ba 5 Nb 4 o 15 -xBaNb 2 o 6 When the ceramic material is equal to 70, mix 0wt%-15wt% BaO-B 2 o 3 -SiO 2 When the glass material is sintered at 890°C, it can be found that when 0wt% glass is added, the sintering is not dense, and the dielectric constant value cannot be increased to 11.3 due to the large number of pores in the ceramic. In addition, if 1wt%-15wt% of BaO-B is added 2 o 3 -SiO 2 After glass, the density increases, the dielectric constant is between 13.8-16.2, the quality factor is also due to the increase in density, and the quality factor increases to 12,478 and 19,753GHz, the temperature capacitance coefficient is 32 to 36ppm / ℃, and the temperature frequency coefficient is - 16 to -18ppm / ℃, insulation resistance up to 1.3×10 11 to 3.6×10 11 Ω.

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Abstract

The invention relates to a microwave dielectric ceramic by low-temperature co-fired ceramics and a preparation method thereof. The microwave dielectric ceramic consists of ywt% of [(1-x)Ba5Nb4O15-xBaWO4] ceramic material and zwt% of BaO-B2O3-SiO2 glass material, wherein the ranges of x, y and z are as follows: x is more than or equal to 0.3 and less than or equal to 0.85, z is more than or equal to 1% and less than or equal to 15%, and the sum of y and z is 100%. The zwt% BaO-B2O3-SiO2 glass material is prepared from the components in percentage by weight: 5-35wt% of BaO, 10-40wt% of B2O3 and 5-25wt% of SiO2, and is obtained by mixing powder of all the components and melting at the temperature of 1000-1300 DEG C. The [(1-x)Ba5Nb4O15-xBaWO4] ceramic material with the percent of ywt% and BaO-B2O3-SiO2 glass material with the percent of zwt% are mixed and then sintered. The material is sintered at a low temperature of 880-900 DEG C for 0.5-4 hours, has the range of dielectric constant of 11.5-30.4, and is applicable to the range from a medium dielectric constant to a low dielectric constant. The microwave dielectric ceramic has the excellent characteristics of low dielectric loss, high quality factor, low temperature frequency coefficient and low capacitance coefficient and the like, and can be co-fired with a noble metal electrode (silver) in the atmospheric environment.

Description

technical field [0001] The invention relates to a technology for manufacturing microwave dielectric ceramics, in particular to low-intermediate dielectric and low dielectric constant low-temperature co-fired ceramic microwave dielectric ceramics and a manufacturing method thereof. Background technique [0002] The general low temperature co-fired ceramic (Low temperature co-fired ceramic, LTCC) method includes ceramics plus low melting point oxides such as boron oxide (B 2 o 3 ) or vanadium pentoxide (V 2 o 5 ) mainly, relying on low-melting point oxides to produce melting first to reduce the sintering temperature. Another way is to add ceramics to glass to produce liquid phase sintering behavior and reduce the sintering temperature. [0003] Due to Ba 5 Nb 4 o 15 When sintering at a high temperature of 1,380°C, Srivastave, A.M. published in "J.Solid State Chem" Volume 134 in 1997, and the dielectric constant ε can be obtained r =41, quality factor Q×f=57,000GHz and ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/495C04B35/622
Inventor 冯奎智曹中亚赖育贤林建基
Owner PROSPERITY DIELECTRICS
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