Switching power-semiconductor device and manufacturing method thereof

A technology of power semiconductors and manufacturing methods, which is applied in the direction of semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve problems such as poor safe working area, high impact ionization, device leakage, etc., to improve the overall safe working area, Effect of improving conductivity and reducing on-resistance

Pending Publication Date: 2017-05-17
CR TECH PINGTAN CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Aiming at the problems of high impact ionization and dynamic avalanche or device leakage and poor safe working area caused by damage caused by the formation of current concentration in the junction terminal area of ​​power semiconductor devices, the embodiment of the present invention provides a switching power Semiconductor device

Method used

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  • Switching power-semiconductor device and manufacturing method thereof
  • Switching power-semiconductor device and manufacturing method thereof
  • Switching power-semiconductor device and manufacturing method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0061] A method for manufacturing a switching power semiconductor device, comprising the steps of:

[0062] 1) Select qualified semi-finished products that have completed the front process;

[0063] 2) Thinning the second surface of the semi-finished product, including first grinding and thinning the second surface, and then soaking in an aqueous sulfuric acid solution with a mass concentration of 98%. The soaking time is 10 minutes. This step of acid soaking treatment The function is to remove the silicon slag generated during grinding and remove the stress generated during grinding. Then take it out and clean it to remove the residual acid on the surface of the semi-finished product;

[0064] 3) Perform phosphorus element ion implantation to the semi-finished chip obtained in step 2), and the implantation dose is 1.0E14cm -2 ;

[0065] 4) Use laser annealing equipment to perform area-selective scanning on the second surface, and scan the center position of the second surf...

Embodiment 2

[0070] A method for manufacturing a switching power semiconductor device, comprising the steps of:

[0071] 1) Select qualified semi-finished products that have completed the front process;

[0072] 2) Thinning the second surface of the semi-finished product, including first grinding and thinning the second surface, and then soaking in an aqueous solution of nitric acid with a mass concentration of 90% and hydrofluoric acid with a mass concentration of 42%, The immersion time is 12 minutes. The role of this step of acid immersion treatment is to remove the silicon slag generated during grinding and remove the stress generated during grinding. Then take it out and clean it to remove the residual acid on the surface of the semi-finished product;

[0073] 3) Carry out boron element ion implantation to the semi-finished chip obtained in step 2), the implantation dose is 3.0E13cm -2 ;

[0074] 4) Use laser annealing equipment to perform area-selective scanning on the second surf...

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PUM

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Abstract

The invention relates to the technical filed of a power semiconductor device, in particular to a switching power semiconductor and a manufacturing method thereof. The device comprises a silicon layer and a metal layer connected with the silicon layer, wherein the silicon lay comprises a relative first surface and a second surface on the opposite side, and the first surface comprises an active area and a junction termination area, and the active area is surrounded by the junction termination area. The second surface comprises a first ion doping region according to the junction termination area and a second ion doping region according to the junction termination area which ion doping concentration is lower than the first ion doping region, the second ion doping region is surrounded by the first ion doping region. The switching power semiconductor and a manufacturing method thereof has the advantages that the free carrier concentration and current density in the device junction termination area is reduced, the collision ionization and dynamic avalanche breakdown is cut down, the edge cell latch-up damage due to the concentration of the current is decreased and the integral safety area of the device is expanded.

Description

technical field [0001] The invention relates to the technical field of power semiconductor devices, in particular to a switch-type power semiconductor device and a manufacturing method thereof. Background technique [0002] In the junction termination area of ​​typical power devices such as MOSFET, IGBT, FRD, etc., the field limiting ring structure and field plate structure are generally included, which help the device to withstand high reverse withstand voltage. During device turn-off or reverse recovery, prone to occurrences such as figure 1 The current concentration phenomenon shown is specifically due to the fact that the ion implantation covers the entire chip backside area (i.e. figure 1 The three parts in the middle are all implanted with the same ion concentration) to form a current concentration in the junction terminal region. And there will be relatively high carrier (minority carrier) concentration in the area with high local electric field, resulting in high i...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/06H01L21/268H01L21/324
CPCH01L29/0684H01L21/268H01L21/324
Inventor 黄国华蔡荣怀陈孟邦曹进伟乔世成
Owner CR TECH PINGTAN CO LTD
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