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Polytetrafluoroethylene composite microwave dielectric material and preparation method thereof

A technology of microwave dielectric materials and polytetrafluoroethylene, applied in the direction of dielectric materials, circuit substrate materials, chemical instruments and methods, etc., to achieve the effect of improving thermal expansion coefficient, ensuring isotropy, and low thermal expansion coefficient

Active Publication Date: 2019-05-21
江西安缔诺科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Highly filled ceramic powder and fiber powder act as physical crosslinking points in the fluororesin phase, effectively improving the thermal expansion coefficient of the filled dielectric material. However, during the calendering process, fluororesin molecules and fiber powder will inevitably The calendering direction produces orientation alignment, resulting in a final product with a greater coefficient of thermal expansion in the Z-axis direction than in the X and Y-axis directions

Method used

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  • Polytetrafluoroethylene composite microwave dielectric material and preparation method thereof
  • Polytetrafluoroethylene composite microwave dielectric material and preparation method thereof
  • Polytetrafluoroethylene composite microwave dielectric material and preparation method thereof

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Experimental program
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Effect test

Embodiment 1

[0044]

[0045]

[0046] Table 1

[0047] Such as figure 1 As shown, in this embodiment, the printed circuit board substrate includes a composite microwave dielectric material plate 200 and metal foils 100 laminated on both sides of the composite microwave dielectric material plate 200 respectively. The metal foil layer 100 is a low-profile electrolytic copper foil, and the thickness of the metal foil layer 100 is 35 um. The thickness of the composite microwave dielectric material sheet 200 is 0.25 mm. Its electrical performance parameters are shown in Table 1.

[0048] The manufacturing method of the printed circuit board substrate of this embodiment includes the following steps:

[0049] Weigh 5 kg of PTFE emulsion (Daikin D210, PTFE solid content 60%), and 6 kg of microwave dielectric ceramic powder filler (BaO-Sm 2 O 3 -TiO 2 System, D50 particle size 2um, dielectric constant 90), glass fiber powder 1 kg (Jushi EMG13-250, diameter 13um, length 50um) is mixed with a mixer for 1 ...

Embodiment 2

[0057] Such as figure 1 As shown, in this embodiment, the printed circuit board substrate includes a composite microwave dielectric material plate 200 and metal foils 100 laminated on both sides of the composite microwave dielectric material plate 200 respectively. The metal foil layer 100 is a low-profile electrolytic copper foil, and the thickness of the metal foil layer 100 is 18 um. The thickness of the composite microwave dielectric material sheet 200 is 0.25 mm. Its electrical performance parameters are shown in Table 1.

[0058] The manufacturing method of the printed circuit board substrate of this embodiment includes the following steps:

[0059] Weigh 10 kilograms of PTFE emulsion (Dajin D210, PTFE solid content 60%), 3.5 kilograms of microwave dielectric ceramic powder filler (BaO-ZnO-TiO 2 System, D50 particle size 5um, dielectric constant 36), 1.5 kg of glass fiber powder (Jushi EMG13-250, diameter 13um, length 50um) is mixed with a mixer for 1 hour at 1500 revolution...

Embodiment 3

[0067] Such as figure 1 As shown, in this embodiment, the printed circuit board substrate includes a composite microwave dielectric material plate 200 and metal foils 100 laminated on both sides of the composite microwave dielectric material plate 200 respectively. The metal foil layer 100 is a low-profile electrolytic copper foil, and the thickness of the metal foil layer 100 is 18 um. The thickness of the composite microwave dielectric material sheet 200 is 0.25 mm. Its electrical performance parameters are shown in Table 1.

[0068] The manufacturing method of the printed circuit board substrate of this embodiment includes the following steps:

[0069] Weigh 10 kg of PTFE emulsion (Dajin D210, PTFE solid content 50%) microwave dielectric ceramic powder filler 4 kg (BaO-ZnO-TiO 2 System, D50 particle size 5um, dielectric constant 36), 1 kilogram of microwave fiber powder (Jushi EMG13-250, diameter 13um, length 50um) is mixed with a mixer for 1 hour at 1500 revolutions to obtain ...

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Abstract

The invention discloses a polytetrafluoroethylene composite microwave dielectric material. calculated based on the total mass of the polytetrafluoroethylene composite microwave dielectric material is composed of the following components in percentage content by mass: 30-60 wt% of polytetrafluoroethylene, 35-60 wt% of microwave dielectric ceramic powder filler, and 5-15 wt% of glass fiber powder. According to the polytetrafluoroethylene composite microwave dielectric material and the preparation method thereof, isostatic pressing compaction is adopted, the isotropy of properties of the material can be ensured, and the composite microwave dielectric material having low thermal expansion coefficients in the X-axis, Y-axis and Z-axis directions is prepared.

Description

Technical field [0001] The invention relates to the field of printed circuit boards, in particular to a printed circuit board substrate and a manufacturing method thereof. Background technique [0002] With the revolution of modern information technology, digital circuits have gradually entered the stage of high-speed information processing and high-frequency signal transmission. In order to process ever-increasing data, the frequency of electronic equipment has become higher and higher. For this reason, on the basis of meeting traditional design and manufacturing requirements, newer requirements have been put forward for the performance of microwave dielectric circuit substrate materials. In view of the fact that the signal applied to the printed circuit board must use high frequency, how to reduce the transmission loss and signal delay on the circuit board has become a difficult problem in the design and manufacture of high frequency circuits. [0003] The coefficient of thermal...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H05K1/03B32B27/18B32B27/32B32B15/085B32B15/20
CPCB32B15/085B32B15/20B32B27/18B32B27/322B32B2250/40B32B2457/08H05K1/0373H05K2201/015H05K2201/0209H05K2201/0275
Inventor 余若冰
Owner 江西安缔诺科技有限公司
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