Transparent film varactor and preparation method thereof

Abstract

The invention relates to the technical field of electronic information materials and components, and particularly relates to a transparent film varactor and a preparation method thereof. The transparent film varactor includes a substrate, a tin barium titanate film deposited on the substrate, and an electrode connected with the tin barium titanate film. The chemical formula of the tin barium titanate in the tin barium titanate film is BaSn0.15Ti0.85O3. The transparent film varactor provided has the advantages of large dielectric tuning rate, low dielectric loss, stable property and high transparency. The transparent film varactor preparation method includes step 1 preparing a tin barium titanate target material; step 2 depositing the tin barium titanate film by means of pulse laser; and step 3 preparing the electrode. According to the transparent film varactor preparation method, the prepared film varactor is good in crystallinity, the components of the film varactor are uniform, and the components of the film varactor are close to the components of the target material.

Description

technical field [0001] The invention relates to the technical field of electronic information materials and components, in particular to a transparent film varactor and a preparation method thereof. Background technique [0002] The transparency of electronic equipment is an important direction for the development of electronic equipment in the future, because it not only has a major improvement in aesthetics, but also has unique optical properties. Recently, international electronic giants, such as Apple, Samsung, Google, etc., are all committed to the research and development and design of transparent electronic devices. In addition, many large companies including China have been working on the research of transparent displays, transparent mobile phones and related transparent electronic communication equipment. The key step to realize the transparency of these electronic devices is the transparency of components. Among them, thin film varactors are indispensable componen...

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Problems solved by technology

[0003] In the prior art, although some transparent thin-film varactors have been prepared, for example, magnesium-bismuth niobate thin-film voltage-controlled varactors, fully transparent bismuth-based pyrochlore thin-film voltage-controlled varactors, transparent strontium-barium titanate-based thin-film voltage-controlled varactors, etc. Controlled varactors, nickel oxide voltage-controlled thin-film varactors, etc., but the above-mentioned transparent thin-film varactors currently prepared have defects: (1) magnesium-bismuth niobate thin-film voltage-controlled varactors and fully transparent bismuth-based Pyrochlore thin-film voltage-controlled varactors, because they contain volatile elements Bi, make their properties unstable, which in turn makes their dielectric tuning rate small; (2) transparent strontium barium titanate-based thin-film voltage-controlled varactors, due to Contains a large amount of Ti element, and because the valence of Ti is unstable, its dielectric loss is high, thereby reducing its dielectric tuning rate; (3) Nickel oxide voltage-controlled thin film varactor, because it is a semiconductor varactor , therefore, its dielectric constant is small, making its dielectric loss extremely large

[0004] In addition, in the prior art, the method of magnetron sputtering is mostly used to prepare transparent film varactors, but the method of using magnetron sputtering is not suitable for preparing multi-component compound film varactors, and makes the prepared film varactors The crystallinity of the thin film varactor is not good, and the composition of the thin film varactor is not uniform enough, and the composition of the thin film varactor is not close enough to the target component

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