Plasma apparatus for laser-induced discharge of liquid tin target

Abstract

The invention provides a plasma apparatus for laser-induced discharge of a liquid tin target. The plasma apparatus comprises an energy supply module, an extreme ultraviolet light generation module and an extreme ultraviolet detector, wherein the energy supply module is used for providing the extreme ultraviolet light generation module with energy needed in discharge; the extreme ultraviolet light generation module comprises the liquid tin target, and extreme ultraviolet light is generated when laser irradiates the tin liquid level of the liquid tin target; and the extreme ultraviolet detector is arranged to form an angle of 45 DEG with the tin liquid level of the liquid tin target and used for receiving the extreme ultraviolet light. After focusing, laser acts on the liquid tin target to realize gasification and ionization of the liquid tin target so as to produce pre-plasma; meanwhile, the liquid tin target is used as an electrode, a copper electrode is placed above tin liquid, and high voltage is applied between the two electrodes; and the high voltage breaks down the pre-plasma for discharge and enables the pre-plasma to be further ionized so as to produce main plasma and radiate extreme ultraviolet light with a length of 13.5 nm. According to the invention, liquid tin is used as the electrode to replace a conventional rotating-disk electrode, so a system is simplified and the stability of the system is improved.

Description

technical field [0001] The invention belongs to the field of laser technology, and more specifically relates to a plasma device for laser-induced discharge of a liquid tin target. Background technique [0002] The rapid development of electronic technology has higher and higher requirements for the integration of semiconductor chips. The minimum line width d that can be drawn in semiconductor wafers by photolithography technology satisfies: d=kλ / NA, where λ is the exposure wavelength and NA is the numerical aperture of the optical system, and k is the process factor. Short wavelengths can effectively reduce the minimum line width. The currently used ArF excimer laser has a wavelength of 193nm and can obtain a node size of 100nm. In order to further improve the integration of chips, people have proposed 13.5nm extreme ultraviolet lithography technology. Nodes below 32nm can be obtained. [0003] Currently, there are two main technologies for generating 13.5nm extreme ultrav...

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Problems solved by technology

[0004] Aiming at the defects of the prior art, the object of the present invention is to provide a plasma device for laser-induced liquid tin target discharge, aiming to solve the problem of the tin droplet detaching from the surface of the disc in the traditional device when the disk is running at high speed, causing pollution and high-speed rotation. Centrifugal force causes uneven thickness of the tin film, the disc needs to be heated to prevent the tin film from solidifying, etc.

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