Forming method of fin type field-effect transistor

Abstract

A forming method of a fin type field-effect transistor comprises the steps of forming a silicon material layer on a film surface of a gate; forming a plurality of discrete first pattern layers on the silicon material layer, wherein the first pattern layers stretches across at least one fin part, and the arrangement direction of the first pattern layers is parallel to the extending direction of the fin part; taking the first pattern layers as a mask, and etching the silicon material layer until the film surface of the gate is exposed, and forming a plurality of discrete initial silicon layers on the film surface of the gate, wherein the initial silicon layers and a surface of a side wall perpendicular to the extending direction of the fin part have first line width roughness; and performing repairing etching treatment on the initial silicon layers and the side wall perpendicular to the extending direction of the fin part so that the initial silicon layers and the surface of the side wall perpendicular to the extending direction of the fin part have second line width roughness, wherein the second line width roughness is smaller than the first line width roughness. By the forming method, the quality of the formed gate is improved, the line width roughness of the gate and the side wall perpendicular to the extending direction of the fin part is improved, and thus, the electrochemical performance of the fin type field-effect transistor is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for forming a fin field effect transistor. Background technique [0002] With the continuous development of semiconductor process technology, the development trend of semiconductor process nodes following Moore's Law continues to decrease. In order to adapt to the reduction of process nodes, the channel length of MOSFET field effect transistors has to be continuously shortened. The shortening of the channel length has the advantages of increasing the die density of the chip and increasing the switching speed of the MOSFET field effect tube. [0003] However, as the channel length of the device is shortened, the distance between the source and the drain of the device is also shortened, so that the control ability of the gate to the channel becomes worse, and the gate voltage pinches off the channel. The difficulty is also increasing, making the pheno...

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Problems solved by technology

[0006] The problem to be solved by the present invention is to provide a method for forming a fin field effect transistor, which solves the problem of large line width roughness of the gate side wall

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