Method and device for depositing silicon carbide on the surface of graphite parts

A technology for surface deposition and graphite parts, which is applied in the field of preparation of inorganic non-metallic materials, and can solve the problems of high hardness of graphite parts

Active Publication Date: 2018-07-20
江苏协鑫特种材料科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Purpose of the invention: the purpose of the present invention is to propose a method for depositing silicon carbide on the surface of graphite parts, solve the problems of purity and coating bonding force of graphite parts, prevent the introduction of impurities into subsequent sections to resist acid and alkali corrosion, and obtain graphite parts with large hardness, Friction resistance

Method used

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  • Method and device for depositing silicon carbide on the surface of graphite parts
  • Method and device for depositing silicon carbide on the surface of graphite parts
  • Method and device for depositing silicon carbide on the surface of graphite parts

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0043] A method for depositing silicon carbide on the surface of a graphite piece, comprising the steps of:

[0044] (1) Impurity removal on graphite surface:

[0045] 1.1 Lower the bottom flange, open the furnace tube, and put in the substrate;

[0046] 1.2 Lift the flange and close the furnace tube;

[0047] 1.3 Vacuum replacement, vacuum degree 0.5mbar;

[0048] 1.4 Heat the heater inside the furnace drum to 600°C, and start to feed nitrogen to a vacuum of 80mbar;

[0049] 1.5 Continue to heat up to 1600°C, feed chlorine gas to a vacuum of 1.0 bar, and maintain 1600°C for 20 minutes;

[0050] 1.6 Continue to heat up to 2000 ° C, maintain 2000 ° C for 8 hours after purification, and then slowly cool down;

[0051] 1.7 Cool down to 1800°C, stop feeding chlorine gas, and maintain 1800°C for 30 minutes;

[0052]1.8 Continue to reduce the vacuum degree while maintaining the nitrogen gas supply, and when the temperature continues to drop to 800°C, the vacuum degree in the fu...

Embodiment 2

[0068] A method for depositing silicon carbide on the surface of a graphite piece, comprising the steps of:

[0069] (1) Impurity removal on graphite surface:

[0070] 1.1 Lower the bottom flange, open the furnace tube, and put in the substrate;

[0071] 1.2 Lift the flange and close the furnace tube;

[0072] 1.3 Vacuum replacement, vacuum degree 1mbar;

[0073] 1.4 Heat the heater inside the furnace drum to 600°C, and start to feed nitrogen to a vacuum of 80mbar;

[0074] 1.5 Continue to heat up to 1500°C, feed chlorine gas to a vacuum of 0.9 bar, and maintain 1500°C for 30 minutes;

[0075] 1.6 Continue to heat up to 1900°C, maintain 1900°C for 12 hours of purification, then slowly cool down;

[0076] 1.7 Cool down to 1500°C, stop feeding chlorine gas, and maintain 1500°C for 30 minutes;

[0077] 1.8 Continue to reduce the vacuum degree while maintaining the nitrogen gas flow, and when the temperature continues to drop to 500°C, the vacuum degree in the furnace will dr...

Embodiment 3

[0093] A method for depositing silicon carbide on the surface of a graphite piece, comprising the steps of:

[0094] (1) Impurity removal on graphite surface:

[0095] 1.1 Lower the bottom flange, open the furnace tube, and put in the substrate;

[0096] 1.2 Lift the flange and close the furnace tube;

[0097] 1.3 Vacuum replacement, vacuum degree 0.5mbar;

[0098] 1.4 Heat the heater inside the furnace barrel to 700°C, and start to feed nitrogen to a vacuum of 60mbar;

[0099] 1.5 Continue to heat up to 1600°C, feed chlorine gas to a vacuum of 1.2bar, and maintain 1600°C for 5 minutes;

[0100] 1.6 Continue to heat up to 2000 ° C, maintain 2000 ° C for 7 hours after purification, and then slowly cool down;

[0101] 1.7 Cool down to 1600°C, stop feeding chlorine gas, and maintain 1600°C for 5 minutes;

[0102] 1.8 Continue to reduce the vacuum degree while maintaining the nitrogen gas flow, and when the temperature continues to drop to 600°C, the vacuum degree in the furn...

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PUM

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Abstract

The invention discloses a method for depositing silicon carbide on the surface of a graphite part. The method comprises the following steps: (1) impurity removal of graphite surface: forming metal halides of impurities on the surface of the graphite part and removing through sublimation; and (2) CVD (chemical vapor deposition): conveying the treated graphite part into a CVD reaction furnace, and depositing a silicon carbide coating on the surface of the graphite part through a CVD reaction. In the invention, a pretreatment furnace is arranged in front of the CVD reaction furnace, the metal impurities contained in the graphite part react with a halogen gas to form metal chlorides which are removed through sublimation, the purification of the graphite part is facilitated, and the contained impurities are prevented from being mixed into follow-up systems. Moreover, through ultrasonic washing, the surface of the graphite part is further cleaned, and influence of the adherent particulate matters on the bonding strength of the silicon carbide coating is avoided.

Description

technical field [0001] The invention relates to the technical field of preparation of inorganic non-metallic materials, in particular to a method and a device for depositing silicon carbide on the surface of a graphite piece. Background technique [0002] To deposit silicon carbide on the surface of graphite parts, methyltrichlorosilane is usually used as a precursor. After a chemical vapor deposition reaction occurs, a silicon carbide coating is obtained, and HCl gas is produced by-product. In some specific applications, the silicon carbide coating is required to be tightly bonded, which can prevent some impurities of the graphite parts from entering the reaction system; in addition, the silicon carbide coating is also required to be tightly bonded and have good wear resistance. For example, fluidized bed reactors for the production of granular silicon are typically lined with graphite and coated with a silicon carbide coating on the surface of the graphite liner. Purified...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C04B41/87C04B41/91
CPCC04B41/009C04B41/5059C04B41/5315C04B41/87C04B41/91C04B41/4531C04B35/522
Inventor 田新蒋文武李力张春伟于伟华
Owner 江苏协鑫特种材料科技有限公司
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