Low temperature preparation method for space silicon carbide reflector module modified layer
A technology of space silicon carbide and mirrors, applied in optical components, optics, instruments, etc., to achieve the effects of reducing energy consumption, high sputtering rate, and shortening the processing cycle
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[0015] The present invention will be described in further detail below, so that those skilled in the art can implement it with reference to the description.
[0016] A low-temperature preparation method for a modified layer of a space silicon carbide mirror assembly includes the following steps:
[0017] 1) Clean the SiC substrate: Use a mixture of ether and alcohol with a volume ratio of 1:1 to ultrasonically clean for 10-15 minutes and then dry it with a hair dryer;
[0018] 2) Prepare the modified layer by sputtering: put the cleaned SiC substrate on the substrate frame of the coating chamber of the PVD coating equipment, vacuumize the coating chamber and turn on the baking device. The baking temperature is 80°C-100°C ℃, when the vacuum degree reaches 5×10-4P, turn on the gas filling system to fill in the reaction gas methane, the flow rate of the reaction gas methane filling is 100-200sccm, and then perform reverse sputtering cleaning on the substrate, the power of the rev...
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