Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Novel heat sink material for semiconductors

A heat sink material, semiconductor technology, applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problems of insufficient bonding between the wrapping layer and the substrate, poor mechanical properties, poor insulation, affecting thermal conductivity, etc., to achieve good mechanical properties, Excellent insulation and low thermal conductivity

Inactive Publication Date: 2016-09-21
黄宇
View PDF9 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] The invention provides a new type of heat sink material for semiconductors to solve the problems of the existing new heat sink materials for semiconductors, such as poor mechanical properties, poor insulation, low thermal conductivity, large expansion coefficient, insufficient bonding of the wrapping layer and the substrate, and affecting thermal conductivity. question

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0071] The preparation method of the novel semiconductor heat sink material comprises the following steps:

[0072] S1: the preparation of the matrix, including the following steps:

[0073] S11: Sodium carbonate and zirconium dioxide sol are dissolved in water 6-8 times the total mass fraction, then put into cellulose, soaked for 6-7 hours, and then dried at 68-72°C until the water content is ≤8%. To obtain mixture I, mix and grind mixture I and dimethyl itaconate for 3-6 hours to obtain mixture II;

[0074] S12: Graphite, alumina, aluminum nitride, silicon carbide, carbon nanotubes, silica, montmorillonite, zinc oxide, light calcium, binder, coupling agent, compatibilizer, antioxidant, stabilizer agent, bridging agent, regulator, strengthening agent, coagulant, toughening agent, stabilizer, terminator, 300-500 parts of water at a microwave power of 100-300W, a temperature of 650-700°C, and a speed of 100- Stir at 400r / min for 3-6h, then dry the resultant until the water co...

Embodiment 1

[0089] A new heat sink material for semiconductors, made of the following raw materials in units of weight: 220 parts of the substrate, 12 parts of the wrapping layer;

[0090] The matrix, in units of weight, is made of the following raw materials: 65 parts of graphite, 8 parts of aluminum oxide, 10 parts of aluminum nitride, 12 parts of silicon carbide, 6 parts of carbon nanotubes, 8 parts of silicon dioxide, montmorillonite 3 parts, 1.5 parts of zinc oxide, 2.5 parts of sodium carbonate, 5 parts of zirconia sol, 4 parts of light calcium, 12 parts of cellulose, 4 parts of dimethyl itaconate, 9 parts of binder, 1.5 parts of coupling agent 1.5 parts, compatibilizer, 1.2 parts of antioxidant, 1.2 parts of stabilizer, 0.9 parts of bridging agent, 0.7 parts of regulator, 0.5 parts of strengthening agent, 0.5 parts of coagulant, 0.3 parts of toughening agent, 0.3 parts of stabilizer , 0.2 parts of terminator;

[0091] The coupling agent is an epoxy silane coupling agent;

[0092]...

Embodiment 2

[0127] A new type of heat sink material for semiconductors, which is made of the following raw materials in units of weight: 152 parts of substrate, 9 parts of wrapping layer;

[0128] The matrix, in units of weight, is made of the following raw materials: 52 parts of graphite, 6 parts of aluminum oxide, 8 parts of aluminum nitride, 10 parts of silicon carbide, 4 parts of carbon nanotubes, 5 parts of silicon dioxide, montmorillonite 2 parts, 1 part of zinc oxide, 2 parts of sodium carbonate, 4 parts of zirconia sol, 3 parts of light calcium, 9 parts of cellulose, 3 parts of dimethyl itaconate, 5 parts of binder, 1 part of coupling agent 1 part, 1 part of compatibilizer, 0.8 part of antioxidant, 0.8 part of stabilizer, 0.6 part of bridging agent, 0.5 part of regulator, 0.4 part of strengthening agent, 0.4 part of coagulant, 0.2 part of toughening agent, 0.2 part of stabilizer , 0.1 part of terminator;

[0129] The coupling agent is an epoxy silane coupling agent;

[0130] Des...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Impact strengthaaaaaaaaaa
Thermal conductivityaaaaaaaaaa
Thermal expansion coefficientaaaaaaaaaa
Login to View More

Abstract

The invention discloses a novel heat sink material for semiconductors. The novel heat sink is prepared from the following raw materials: a base body and a wrapping layer, wherein the base body is prepared from the following raw materials: graphite, aluminum oxide, aluminum nitride, silicon carbide, carbon nano-tubes, silicon dioxide, montmorillonite, zinc oxide, sodium carbonate, zirconium dioxide sol, light calcium, cellulose, dimethyl itaconate, a binding agent, a coupling agent, a compatilizer, an antioxidant, a stabilizing agent, a bridging agent, a conditioning agent, an enhancer, a coacervating agent, a flexibilizer, a stabilizer and a terminating agent; and the wrapping layer is prepared from the following raw materials: silicon carbide fiber, graphene, silicon dioxide, silicon carbide, sodium metasilicate, carboxymethyl cellulose sodium, an initiator, a crosslinking agent, a softening agent, a tackifier, a catalyst and a fire retardant. The novel heat sink material for the semiconductors prepared by the invention has good mechanical performance, high insulativity and heat conductivity and relatively low expansion coefficient, and can be widely applied to LED heat conduction and heat radiation heat sink materials in semiconductor technology.

Description

[0001] 【Technical field】 [0002] The invention belongs to the technical field of electronic components and the technical field of heat sink material preparation, and in particular relates to a novel heat sink material for semiconductors. 【Background technique】 [0003] With the continuous improvement of semiconductor technology and manufacturing process, the luminous flux and luminous efficiency of LED have been continuously improved, and power LEDs have been widely used in daily life and industrial production. However, for high-power LEDs, the power density of the chip is high, and the large heat generation undoubtedly puts forward higher requirements for its heat dissipation materials. [0004] For the heat dissipation of traditional LED chips, a substrate (ie, heat sink material) is provided under the LED chip, and the bottom of the substrate is connected to the heat sink. The heat of the LED chip is conducted to the heat sink through the substrate, and then dissipated b...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L33/64
CPCH01L33/641
Inventor 黄宇
Owner 黄宇
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com