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Method for synthesizing and growing titanium disulfide single crystal at high temperature

A technology for titanium disulfide and single crystals, which is applied in the field of high-temperature synthesis and growth of titanium disulfide single crystals, which can solve problems such as unsatisfactory optical properties, and achieve the effects of high crystal purity, safe operation, and easy acquisition

Inactive Publication Date: 2016-09-07
南京安京太赫光电技术有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

There are many methods for its single crystal growth. It can be grown by heating titanium wire in sulfur vapor, it can also be synthesized by gas phase reaction of titanium tetrachloride and hydrogen sulfide, it can also be prepared by titanium disulfide and n-butyllithium in hexane solution, or by electrolysis Chemical reaction preparation, but the molybdenum disulfide single crystals prepared by these methods have more or less defects, resulting in unsatisfactory optical properties

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0007] 2. Place the sealed quartz tube in a single temperature zone tube furnace, where the end where the drug is placed is aligned with the thermocouple of the tube furnace. Warming up to 850 degrees Celsius in 3 hours.

[0008] 3. The temperature in the single temperature zone tube furnace was maintained at 850 degrees centigrade for 72 hours at a constant temperature.

[0009] 4. Reduce the temperature in the tube furnace to room temperature within 12 hours, and a flaky titanium disulfide crystal with a size of about 4*5 mm can be obtained at one end of the quartz tube.

[0010] Embodiment 2: 1. Weigh 0.50 g of spongy titanium, 0.67 g of pure sulfur powder, and 65 mg of pure iodine block, pour them into a section of quartz tube with an inner diameter of 13 mm and a length of about 15 cm, and seal both ends.

Embodiment 2

[0011] 2. Place the sealed quartz tube in a single temperature zone tube furnace, where the end where the drug is placed is aligned with the thermocouple of the tube furnace. Warming up to 880 degrees Celsius in 3 hours.

[0012] 3. The temperature in the single temperature zone tube furnace was maintained at 880 degrees centigrade for 60 hours at a constant temperature.

[0013] 4. After 12 hours, reduce the temperature in the tube furnace to room temperature, and a flaky 3*3mm titanium disulfide crystal can be obtained at one end of the quartz tube.

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PUM

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Abstract

The invention relates to a method for synthesizing and growing a titanium disulfide single crystal at a high temperature. The titanium disulfide single crystal can be prepared through mixing sponge-shaped titanium with sulfur, sealing the mixture and proper amount of an iodine block into a heat-resisting quartz tube and heating at the high temperature.

Description

technical field [0001] The invention relates to a method for synthesizing and growing titanium disulfide single crystal at high temperature. Background technique [0002] Transition metal sulfide MS 2 (M can be transition metal materials such as W, Mo, Ti, etc.) It occupies an important proportion in the two-dimensional material single crystal, which has a layered structure similar to graphite, and the layers are combined by van der Waals force , can be easily overcome by external factors to prepare nanomaterials with few layers or even single atomic layers. Among them, titanium disulfide is a brassy scaly crystal with metallic luster. It is stable at room temperature and stable to water, dilute sulfuric acid and hydrochloric acid, but nitric acid and concentrated sulfuric acid can make it decompose and release sulfur, thus destroying its structure. In recent years, it has been found that titanium disulfide has a layered structure, that is, each layer includes an interlay...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/46C30B1/10
CPCC30B29/46C30B1/10
Inventor 邱俊
Owner 南京安京太赫光电技术有限公司
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