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Enhanced fin-type insulated gate high-electronic mobility transistor

A technology with high electron mobility and insulated gates, applied in circuits, electrical components, semiconductor devices, etc., can solve problems such as large sub-threshold swings, unfavorable nanoscale digital integrated circuits, and severe short channel effects, and achieve enhanced gate controllability, low gate leakage current, and the effect of suppressing short channel effects

Active Publication Date: 2016-07-27
XIDIAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, when the gate length of this device is small, the short channel effect is serious, and the subthreshold swing is large, which is not conducive to the realization of nanoscale digital integrated circuits in enhancement / depletion mode.

Method used

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  • Enhanced fin-type insulated gate high-electronic mobility transistor
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  • Enhanced fin-type insulated gate high-electronic mobility transistor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0041] Example 1: Fabrication of a fin-type AlGaN / GaN heterojunction with a width of 200nm and a groove gate depth of 8nm enhanced fin-type insulated gate high electron mobility crystal.

[0042] Step 1: growing a buffer layer.

[0043] At a temperature of 700°C and a pressure of 1.5×10 4 Under the process conditions of Pa, the use of metal organic compound chemical vapor deposition MOCVD equipment in Figure 4 A GaN buffer layer with a thickness of 1 μm is grown on the SiC substrate shown in (a), and the reaction gases are trimethylgallium and ammonia.

[0044] Step 2: growing a channel layer.

[0045] At a temperature of 850°C and a pressure of 1.5×10 4 Under the process conditions of Pa, a 5nm-thick GaN channel layer is grown on the GaN buffer layer by using metal organic compound chemical vapor deposition MOCVD equipment, and the reaction gases are trimethylgallium and ammonia.

[0046] Step 3: growing a barrier layer.

[0047] At a temperature of 950°C and a pressure...

Embodiment 2

[0065] Example 2: Fabrication of a fin-type AlGaN / GaN heterojunction with a width of 300nm and a groove gate depth of 5nm enhanced fin-type insulated gate high electron mobility crystal.

[0066] Step A: growing a buffer layer on the substrate.

[0067] A layer of GaN buffer layer with a thickness of 1.5 μm was grown on the SiC substrate by metal organic compound chemical vapor deposition MOCVD equipment. The growth process conditions were: temperature 700 ° C, pressure 1.5 × 10 4 Pa, the reaction gas is trimethylgallium and ammonia.

[0068] Step B: growing a channel layer on the buffer layer.

[0069] The implementation of this step is the same as step 2 of Embodiment 1.

[0070] Step C: growing a barrier layer on the channel layer.

[0071] Using metal organic compound chemical vapor deposition MOCVD equipment to grow an AlGaN barrier layer with a thickness of 15nm and an Al composition of 30% on the GaN channel layer, the GaN channel layer and the AlGaN barrier layer fo...

Embodiment 3

[0086] Example 3: Fabrication of a fin-type AlGaN / GaN heterojunction with a width of 250nm and a groove gate depth of 7nm enhanced fin-type insulated gate high electron mobility crystal.

[0087] Step 1: Growth buffer layer.

[0088] A layer of GaN buffer layer with a thickness of 1.5 μm was grown on the SiC substrate using metal organic compound chemical vapor deposition MOCVD equipment. The growth process conditions were: temperature 700 ° C, pressure 1.5 × 10 4 Pa, the reaction gas is trimethylgallium and ammonia.

[0089] Step 2: growing a channel layer.

[0090] The implementation of this step is the same as step 2 of Embodiment 1.

[0091] Step 3: Growing a barrier layer.

[0092] On the GaN channel layer, use metal organic compound chemical vapor deposition MOCVD equipment to grow an AlGaN barrier layer with a thickness of 17nm and an Al composition of 27%. The GaN channel layer and the AlGaN barrier layer form an AlGaN / GaN heterojunction , A two-dimensional electro...

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Abstract

The invention discloses an enhanced fin-type insulated gate high-electronic mobility transistor, which is mainly used for solving the problems of small threshold voltage and serious short channel effect of an existing enhanced device. The enhanced fin-type insulated gate high-electronic mobility transistor comprises a substrate (1), a GaN buffer layer (2), a GaN channel layer (3), an AlGaN barrier layer (4), a gate dielectric layer (5), a passivation layer (6), a source electrode, a drain electrode and a gate electrode from bottom to top, the GaN channel layer and the AlGaN barrier layer form an AlGaN / GaN heterojunction, and the source electrode and the drain electrode are arranged at the two ends of the AlGaN / GaN heterojunction. The device has the advantages of high threshold voltage, high gate control capability and small source / drain resistance, and can be taken as a small-size enhanced device.

Description

technical field [0001] The invention belongs to the technical field of microelectronic devices, in particular to an enhanced fin-type insulated gate high electron mobility transistor MIS-HEMT, which can be used for nanoscale digital integrated circuits in enhanced / depleted modes. Background technique [0002] As a third-generation semiconductor material, GaN material is considered to be an excellent material for making microwave power devices and high-speed devices due to its advantages such as large band gap, high concentration of two-dimensional electron gas 2DEG and high electron saturation velocity. Especially the AlGaN / GaN heterojunction high electron mobility transistor HEMT is widely used in integrated circuits. [0003] Usually, a high-density two-dimensional electron gas 2DEG has been formed when the AlGaN / GaN high electron mobility transistor device is fabricated, and such a device belongs to the normally-on depletion-mode device D-HEMT. In order to realize the no...

Claims

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Application Information

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IPC IPC(8): H01L29/778H01L29/417H01L29/423H01L21/335
CPCH01L29/41758H01L29/4236H01L29/66462H01L29/778
Inventor 张金风安阳黄旭张进成郝跃
Owner XIDIAN UNIV
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